Analytical modeling of current gain-Earth voltage products in Si/Si1-xGex/Si heterojunction bipolar transistors

Erwin J. Prinz; James Christopher Sturm

doi:10.1109/IEDM.1991.235291

Analytical modeling of current gain-Earth voltage products in Si/Si_1-xGe_x/Si heterojunction bipolar transistors

Erwin J. Prinz, James Christopher Sturm

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

21 Scopus citations

Abstract

The tradeoff between common emitter current gain beta and Early voltage V_A in heterojunction bipolar transistors (HBTs), where both bandgap and doping can vary in the base, has been studied. The Early voltage depends exponentially on the difference between the bandgap at the collector side of the base and the largest bandgap in the base, allowing very high Early voltages with only very thin narrow bandgap regions. Using Si/Si_1-xGe_x/Si narrow gap base HBTs with a two layer stepped base, beta V_A products of over 100000 V have been achieved for devices with a base width of only 400 AA. However, the presence of parasitic potential barriers for minority carriers at the base-collector junction of a HBT degrades V_A because changing the base-collector voltage affects not only the width but also the height of these barriers. They can be caused, e.g., by base dopant outdiffusion into the collector due to high-temperature processing. An analytical model of the effect of such barriers on the Early voltage is presented.

Original language	English (US)
Title of host publication	International Electron Devices Meeting 1991, IEDM 1991
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	853-856
Number of pages	4
Volume	1991-January
ISBN (Electronic)	0780302435
DOIs	https://doi.org/10.1109/IEDM.1991.235291
State	Published - Jan 1 1991
Event	International Electron Devices Meeting, IEDM 1991 - Washington, United States Duration: Dec 8 1991 → Dec 11 1991

Other

Other	International Electron Devices Meeting, IEDM 1991
Country/Territory	United States
City	Washington
Period	12/8/91 → 12/11/91

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Materials Chemistry

Access to Document

10.1109/IEDM.1991.235291

Cite this

@inproceedings{50a1abe0cd104edb91752f0ba3285b5d,

title = "Analytical modeling of current gain-Earth voltage products in Si/Si1-xGex/Si heterojunction bipolar transistors",

abstract = "The tradeoff between common emitter current gain beta and Early voltage VA in heterojunction bipolar transistors (HBTs), where both bandgap and doping can vary in the base, has been studied. The Early voltage depends exponentially on the difference between the bandgap at the collector side of the base and the largest bandgap in the base, allowing very high Early voltages with only very thin narrow bandgap regions. Using Si/Si1-xGex/Si narrow gap base HBTs with a two layer stepped base, beta VA products of over 100000 V have been achieved for devices with a base width of only 400 AA. However, the presence of parasitic potential barriers for minority carriers at the base-collector junction of a HBT degrades VA because changing the base-collector voltage affects not only the width but also the height of these barriers. They can be caused, e.g., by base dopant outdiffusion into the collector due to high-temperature processing. An analytical model of the effect of such barriers on the Early voltage is presented.",

author = "Prinz, {Erwin J.} and Sturm, {James Christopher}",

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doi = "10.1109/IEDM.1991.235291",

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booktitle = "International Electron Devices Meeting 1991, IEDM 1991",

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Prinz, EJ & Sturm, JC 1991, Analytical modeling of current gain-Earth voltage products in Si/Si_1-xGe_x/Si heterojunction bipolar transistors. in International Electron Devices Meeting 1991, IEDM 1991. vol. 1991-January, 235291, Institute of Electrical and Electronics Engineers Inc., pp. 853-856, International Electron Devices Meeting, IEDM 1991, Washington, United States, 12/8/91. https://doi.org/10.1109/IEDM.1991.235291

Analytical modeling of current gain-Earth voltage products in Si/Si_1-xGe_x/Si heterojunction bipolar transistors. / Prinz, Erwin J.; Sturm, James Christopher.

International Electron Devices Meeting 1991, IEDM 1991. Vol. 1991-January Institute of Electrical and Electronics Engineers Inc., 1991. p. 853-856 235291.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - The tradeoff between common emitter current gain beta and Early voltage VA in heterojunction bipolar transistors (HBTs), where both bandgap and doping can vary in the base, has been studied. The Early voltage depends exponentially on the difference between the bandgap at the collector side of the base and the largest bandgap in the base, allowing very high Early voltages with only very thin narrow bandgap regions. Using Si/Si1-xGex/Si narrow gap base HBTs with a two layer stepped base, beta VA products of over 100000 V have been achieved for devices with a base width of only 400 AA. However, the presence of parasitic potential barriers for minority carriers at the base-collector junction of a HBT degrades VA because changing the base-collector voltage affects not only the width but also the height of these barriers. They can be caused, e.g., by base dopant outdiffusion into the collector due to high-temperature processing. An analytical model of the effect of such barriers on the Early voltage is presented.

AB - The tradeoff between common emitter current gain beta and Early voltage VA in heterojunction bipolar transistors (HBTs), where both bandgap and doping can vary in the base, has been studied. The Early voltage depends exponentially on the difference between the bandgap at the collector side of the base and the largest bandgap in the base, allowing very high Early voltages with only very thin narrow bandgap regions. Using Si/Si1-xGex/Si narrow gap base HBTs with a two layer stepped base, beta VA products of over 100000 V have been achieved for devices with a base width of only 400 AA. However, the presence of parasitic potential barriers for minority carriers at the base-collector junction of a HBT degrades VA because changing the base-collector voltage affects not only the width but also the height of these barriers. They can be caused, e.g., by base dopant outdiffusion into the collector due to high-temperature processing. An analytical model of the effect of such barriers on the Early voltage is presented.

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