Analytical model of apparent threshold voltage lowering induced by contact resistance in amorphous silicon thin film transistors

Bahman Hekmatshoar; Ke Long; Sigurd Wagner; James C. Sturm

doi:10.1109/DRC.2007.4373684

Analytical model of apparent threshold voltage lowering induced by contact resistance in amorphous silicon thin film transistors

Bahman Hekmatshoar, Ke Long, Sigurd Wagner, James C. Sturm

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	65th DRC Device Research Conference
Pages	131-132
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2007.4373684
State	Published - 2007
Event	65th DRC Device Research Conference - South Bend, India Duration: Jun 18 2007 → Jun 20 2007

Publication series

Name	65th DRC Device Research Conference

Other

Other	65th DRC Device Research Conference
Country/Territory	India
City	South Bend
Period	6/18/07 → 6/20/07

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2007.4373684

Cite this

@inproceedings{0a18902937724abd94bb58a403db9f66,

title = "Analytical model of apparent threshold voltage lowering induced by contact resistance in amorphous silicon thin film transistors",

author = "Bahman Hekmatshoar and Ke Long and Sigurd Wagner and Sturm, {James C.}",

year = "2007",

doi = "10.1109/DRC.2007.4373684",

language = "English (US)",

isbn = "1424411025",

series = "65th DRC Device Research Conference",

pages = "131--132",

booktitle = "65th DRC Device Research Conference",

note = "65th DRC Device Research Conference ; Conference date: 18-06-2007 Through 20-06-2007",

}

Hekmatshoar, B, Long, K, Wagner, S & Sturm, JC 2007, Analytical model of apparent threshold voltage lowering induced by contact resistance in amorphous silicon thin film transistors. in 65th DRC Device Research Conference., 4373684, 65th DRC Device Research Conference, pp. 131-132, 65th DRC Device Research Conference, South Bend, India, 6/18/07. https://doi.org/10.1109/DRC.2007.4373684

Analytical model of apparent threshold voltage lowering induced by contact resistance in amorphous silicon thin film transistors. / Hekmatshoar, Bahman; Long, Ke; Wagner, Sigurd et al.
65th DRC Device Research Conference. 2007. p. 131-132 4373684 (65th DRC Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Analytical model of apparent threshold voltage lowering induced by contact resistance in amorphous silicon thin film transistors

AU - Hekmatshoar, Bahman

AU - Long, Ke

AU - Wagner, Sigurd

AU - Sturm, James C.

PY - 2007

Y1 - 2007

UR - http://www.scopus.com/inward/record.url?scp=47249120495&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=47249120495&partnerID=8YFLogxK

U2 - 10.1109/DRC.2007.4373684

DO - 10.1109/DRC.2007.4373684

M3 - Conference contribution

AN - SCOPUS:47249120495

SN - 1424411025

SN - 9781424411023

T3 - 65th DRC Device Research Conference

SP - 131

EP - 132

BT - 65th DRC Device Research Conference

T2 - 65th DRC Device Research Conference

Y2 - 18 June 2007 through 20 June 2007

ER -

Analytical model of apparent threshold voltage lowering induced by contact resistance in amorphous silicon thin film transistors

Publication series

Other

All Science Journal Classification (ASJC) codes

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