Analytical model of apparent threshold voltage lowering induced by contact resistance in amorphous silicon thin film transistors

Bahman Hekmatshoar, Ke Long, Sigurd Wagner, James C. Sturm

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations
Original languageEnglish (US)
Title of host publication65th DRC Device Research Conference
Pages131-132
Number of pages2
DOIs
StatePublished - Dec 1 2007
Event65th DRC Device Research Conference - South Bend, India
Duration: Jun 18 2007Jun 20 2007

Publication series

Name65th DRC Device Research Conference

Other

Other65th DRC Device Research Conference
CountryIndia
CitySouth Bend
Period6/18/076/20/07

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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    Hekmatshoar, B., Long, K., Wagner, S., & Sturm, J. C. (2007). Analytical model of apparent threshold voltage lowering induced by contact resistance in amorphous silicon thin film transistors. In 65th DRC Device Research Conference (pp. 131-132). [4373684] (65th DRC Device Research Conference). https://doi.org/10.1109/DRC.2007.4373684