ANALYSIS OF LOW-ENERGY ELECTRON DIFFRACTION INTENSITIES FROM ZnS(110).

Preliminary results for the atomic geometry of the (110) surface of ZnS are reported. The surface structure is determined by comparing dynamical calculations of elastic low-energy electron diffraction (ELEED) intensities with those measured at T equals 300 K using a pulsed floodgun technique to suppress the charging of the insulating ZnS sample. In contrast to other tetrahedrally-coordinated, zincblende-structure compound semiconductors for which the (110) surfaces are known to be reconstructed, i. e. , GaAs, InSb, InP, and ZnTe, the measured ELEED intensities from ZnS(110) are described by calculations based on the truncated bulk atomic geometry and minor variants.