Preliminary results for the atomic geometry of the (110) surface of ZnS are reported. The surface structure is determined by comparing dynamical calculations of elastic low-energy electron diffraction (ELEED) intensities with those measured at T equals 300 K using a pulsed floodgun technique to suppress the charging of the insulating ZnS sample. In contrast to other tetrahedrally-coordinated, zincblende-structure compound semiconductors for which the (110) surfaces are known to be reconstructed, i. e. , GaAs, InSb, InP, and ZnTe, the measured ELEED intensities from ZnS(110) are described by calculations based on the truncated bulk atomic geometry and minor variants.
|Original language||English (US)|
|Number of pages||5|
|Journal||Journal of vacuum science & technology|
|State||Published - Jan 1 1980|
|Event||Proc of the Natl Symp of the Am Vac Soc, 27th, Pt 2 - Detroit, MI, Engl|
Duration: Oct 13 1980 → Oct 17 1980
All Science Journal Classification (ASJC) codes