ANALYSIS OF LOW-ENERGY ELECTRON DIFFRACTION INTENSITIES FROM ZnS(110).

C. B. Duke; R. J. Meyer; A. Paton; Antoine Kahn; J. Carelli; J. L. Yeh

doi:10.1116/1.570979

ANALYSIS OF LOW-ENERGY ELECTRON DIFFRACTION INTENSITIES FROM ZnS(110).

C. B. Duke, R. J. Meyer, A. Paton, Antoine Kahn, J. Carelli, J. L. Yeh

Research output: Contribution to journal › Conference article › peer-review

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Abstract

Preliminary results for the atomic geometry of the (110) surface of ZnS are reported. The surface structure is determined by comparing dynamical calculations of elastic low-energy electron diffraction (ELEED) intensities with those measured at T equals 300 K using a pulsed floodgun technique to suppress the charging of the insulating ZnS sample. In contrast to other tetrahedrally-coordinated, zincblende-structure compound semiconductors for which the (110) surfaces are known to be reconstructed, i. e. , GaAs, InSb, InP, and ZnTe, the measured ELEED intensities from ZnS(110) are described by calculations based on the truncated bulk atomic geometry and minor variants.

Original language	English (US)
Pages (from-to)	866-870
Number of pages	5
Journal	Journal of vacuum science & technology
Volume	18
Issue number	3
DOIs	https://doi.org/10.1116/1.570979
State	Published - 1980
Event	Proc of the Natl Symp of the Am Vac Soc, 27th, Pt 2 - Detroit, MI, Engl Duration: Oct 13 1980 → Oct 17 1980

All Science Journal Classification (ASJC) codes

General Engineering

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10.1116/1.570979

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title = "ANALYSIS OF LOW-ENERGY ELECTRON DIFFRACTION INTENSITIES FROM ZnS(110).",

abstract = "Preliminary results for the atomic geometry of the (110) surface of ZnS are reported. The surface structure is determined by comparing dynamical calculations of elastic low-energy electron diffraction (ELEED) intensities with those measured at T equals 300 K using a pulsed floodgun technique to suppress the charging of the insulating ZnS sample. In contrast to other tetrahedrally-coordinated, zincblende-structure compound semiconductors for which the (110) surfaces are known to be reconstructed, i. e. , GaAs, InSb, InP, and ZnTe, the measured ELEED intensities from ZnS(110) are described by calculations based on the truncated bulk atomic geometry and minor variants.",

author = "Duke, {C. B.} and Meyer, {R. J.} and A. Paton and Antoine Kahn and J. Carelli and Yeh, {J. L.}",

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T1 - ANALYSIS OF LOW-ENERGY ELECTRON DIFFRACTION INTENSITIES FROM ZnS(110).

AU - Duke, C. B.

AU - Meyer, R. J.

AU - Paton, A.

AU - Kahn, Antoine

AU - Carelli, J.

AU - Yeh, J. L.

PY - 1980

Y1 - 1980

N2 - Preliminary results for the atomic geometry of the (110) surface of ZnS are reported. The surface structure is determined by comparing dynamical calculations of elastic low-energy electron diffraction (ELEED) intensities with those measured at T equals 300 K using a pulsed floodgun technique to suppress the charging of the insulating ZnS sample. In contrast to other tetrahedrally-coordinated, zincblende-structure compound semiconductors for which the (110) surfaces are known to be reconstructed, i. e. , GaAs, InSb, InP, and ZnTe, the measured ELEED intensities from ZnS(110) are described by calculations based on the truncated bulk atomic geometry and minor variants.

AB - Preliminary results for the atomic geometry of the (110) surface of ZnS are reported. The surface structure is determined by comparing dynamical calculations of elastic low-energy electron diffraction (ELEED) intensities with those measured at T equals 300 K using a pulsed floodgun technique to suppress the charging of the insulating ZnS sample. In contrast to other tetrahedrally-coordinated, zincblende-structure compound semiconductors for which the (110) surfaces are known to be reconstructed, i. e. , GaAs, InSb, InP, and ZnTe, the measured ELEED intensities from ZnS(110) are described by calculations based on the truncated bulk atomic geometry and minor variants.

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ANALYSIS OF LOW-ENERGY ELECTRON DIFFRACTION INTENSITIES FROM ZnS(110).

Abstract

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