An RF circuit model of a quantum point contact

Sungmu Kang, Chris Rutherglen, Nima Rouhi, Peter Burke, L. N. Pfeiffer, K. W. West

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

We develop a realistic, physics based, practical RF circuit model for the AC impedance of a quantum point contact that includes the ohmic contacts, the on-chip lead resistance and kinetic inductance, and the quantum point contact impedance itself. The kinetic inductance of the electrons in the leads in series with the quantum point contact capacitance form a resonant tank circuit whose resonant frequency depends on the width of the quantum point contact channel. These measurements probe devices in the following qualitative regime: They are in the ballistic limit, and the measurement frequency is higher than the electron scattering frequency.

Original languageEnglish (US)
Article number5419288
Pages (from-to)391-394
Number of pages4
JournalIEEE Sensors Journal
Volume10
Issue number3
DOIs
StatePublished - Mar 2010
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

Keywords

  • GaAs
  • Quantum Point Contact
  • RF circuit model

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