Abstract
We employ density functional calculations to present a detailed picture of the atomic-level interactions at doped Al2O3/Ni interfaces. In particular, we emphasize the importance of local structural and electronic relaxation in determining the global adhesion between metal/ceramic couples. We find localized metal-metal and dopant metal-oxo bonding can produce strong interface adhesion even where no new interracial reaction product is formed, driven by a combination of oxide donation to dopant acceptor orbitals along with localized covalent dopant metal-oxo and several types of metal-metal bonds. Understanding the local mechanisms of strengthening heterogeneous interfaces may result in practical advances ranging from coating to catalytic applications.
Original language | English (US) |
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Pages (from-to) | 7995-8004 |
Number of pages | 10 |
Journal | Journal of Physical Chemistry B |
Volume | 106 |
Issue number | 33 |
DOIs | |
State | Published - Aug 22 2002 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films
- Materials Chemistry