An ASIC for readout of post-processed thin-film MEMS resonators by employing capacitive interfacing and active parasitic cancellation

L. Huang; W. Rieutort-Louis; A. Gualdino; L. Teagno; Y. Hu; J. Mouro; J. Sanz-Robinson; J. C. Sturm; S. Wagner; V. Chu; J. P. Conde; N. Verma

doi:10.1109/VLSIC.2014.6858442

An ASIC for readout of post-processed thin-film MEMS resonators by employing capacitive interfacing and active parasitic cancellation

L. Huang, W. Rieutort-Louis, A. Gualdino, L. Teagno, Y. Hu, J. Mouro, J. Sanz-Robinson, J. C. Sturm, S. Wagner, V. Chu, J. P. Conde, N. Verma

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Thin-film MEMS bridges as micro-resonators have proven attractive for various sensing applications (acceleration, mass, chemical, pressure, etc.) by using frequency shift as a basis for sensing [1]. Low-temperature processing of amorphous-silicon (a-Si:H) enables low-cost fabrication of high-Q MEMS bridges having excellent compatibility with CMOS post processing. However, the a-Si:H bridges have weak motional conductances [2]. Parasitic feed-through capacitances, both due to the device structure and routing, can easily drown out the resonant behavior. This paper proposes a non-contact MEMS interfacing and readout system in standard CMOS which enables robust integration while substantially rejecting the effects of parasitic feed-through capacitance.

Original language	English (US)
Title of host publication	2014 Symposium on VLSI Circuits, VLSIC 2014 - Digest of Technical Papers
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781479933273
DOIs	https://doi.org/10.1109/VLSIC.2014.6858442
State	Published - 2014
Event	28th IEEE Symposium on VLSI Circuits, VLSIC 2014 - Honolulu, HI, United States Duration: Jun 10 2014 → Jun 13 2014

Publication series

Name	IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Other

Other	28th IEEE Symposium on VLSI Circuits, VLSIC 2014
Country/Territory	United States
City	Honolulu, HI
Period	6/10/14 → 6/13/14

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/VLSIC.2014.6858442

Cite this

Huang, L., Rieutort-Louis, W., Gualdino, A., Teagno, L., Hu, Y., Mouro, J., Sanz-Robinson, J., Sturm, J. C., Wagner, S., Chu, V., Conde, J. P., & Verma, N. (2014). An ASIC for readout of post-processed thin-film MEMS resonators by employing capacitive interfacing and active parasitic cancellation. In 2014 Symposium on VLSI Circuits, VLSIC 2014 - Digest of Technical Papers Article 6858442 (IEEE Symposium on VLSI Circuits, Digest of Technical Papers). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIC.2014.6858442

Huang, L. ; Rieutort-Louis, W. ; Gualdino, A. et al. / An ASIC for readout of post-processed thin-film MEMS resonators by employing capacitive interfacing and active parasitic cancellation. 2014 Symposium on VLSI Circuits, VLSIC 2014 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2014. (IEEE Symposium on VLSI Circuits, Digest of Technical Papers).

@inproceedings{19282802428b47759a44df28db2159e9,

title = "An ASIC for readout of post-processed thin-film MEMS resonators by employing capacitive interfacing and active parasitic cancellation",

abstract = "Thin-film MEMS bridges as micro-resonators have proven attractive for various sensing applications (acceleration, mass, chemical, pressure, etc.) by using frequency shift as a basis for sensing [1]. Low-temperature processing of amorphous-silicon (a-Si:H) enables low-cost fabrication of high-Q MEMS bridges having excellent compatibility with CMOS post processing. However, the a-Si:H bridges have weak motional conductances [2]. Parasitic feed-through capacitances, both due to the device structure and routing, can easily drown out the resonant behavior. This paper proposes a non-contact MEMS interfacing and readout system in standard CMOS which enables robust integration while substantially rejecting the effects of parasitic feed-through capacitance.",

author = "L. Huang and W. Rieutort-Louis and A. Gualdino and L. Teagno and Y. Hu and J. Mouro and J. Sanz-Robinson and Sturm, {J. C.} and S. Wagner and V. Chu and Conde, {J. P.} and N. Verma",

year = "2014",

doi = "10.1109/VLSIC.2014.6858442",

language = "English (US)",

isbn = "9781479933273",

series = "IEEE Symposium on VLSI Circuits, Digest of Technical Papers",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2014 Symposium on VLSI Circuits, VLSIC 2014 - Digest of Technical Papers",

address = "United States",

note = "28th IEEE Symposium on VLSI Circuits, VLSIC 2014 ; Conference date: 10-06-2014 Through 13-06-2014",

}

Huang, L, Rieutort-Louis, W, Gualdino, A, Teagno, L, Hu, Y, Mouro, J, Sanz-Robinson, J, Sturm, JC, Wagner, S, Chu, V, Conde, JP & Verma, N 2014, An ASIC for readout of post-processed thin-film MEMS resonators by employing capacitive interfacing and active parasitic cancellation. in 2014 Symposium on VLSI Circuits, VLSIC 2014 - Digest of Technical Papers., 6858442, IEEE Symposium on VLSI Circuits, Digest of Technical Papers, Institute of Electrical and Electronics Engineers Inc., 28th IEEE Symposium on VLSI Circuits, VLSIC 2014, Honolulu, HI, United States, 6/10/14. https://doi.org/10.1109/VLSIC.2014.6858442

An ASIC for readout of post-processed thin-film MEMS resonators by employing capacitive interfacing and active parasitic cancellation. / Huang, L.; Rieutort-Louis, W.; Gualdino, A. et al.
2014 Symposium on VLSI Circuits, VLSIC 2014 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2014. 6858442 (IEEE Symposium on VLSI Circuits, Digest of Technical Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - An ASIC for readout of post-processed thin-film MEMS resonators by employing capacitive interfacing and active parasitic cancellation

AU - Huang, L.

AU - Rieutort-Louis, W.

AU - Gualdino, A.

AU - Teagno, L.

AU - Hu, Y.

AU - Mouro, J.

AU - Sanz-Robinson, J.

AU - Sturm, J. C.

AU - Wagner, S.

AU - Chu, V.

AU - Conde, J. P.

AU - Verma, N.

PY - 2014

Y1 - 2014

N2 - Thin-film MEMS bridges as micro-resonators have proven attractive for various sensing applications (acceleration, mass, chemical, pressure, etc.) by using frequency shift as a basis for sensing [1]. Low-temperature processing of amorphous-silicon (a-Si:H) enables low-cost fabrication of high-Q MEMS bridges having excellent compatibility with CMOS post processing. However, the a-Si:H bridges have weak motional conductances [2]. Parasitic feed-through capacitances, both due to the device structure and routing, can easily drown out the resonant behavior. This paper proposes a non-contact MEMS interfacing and readout system in standard CMOS which enables robust integration while substantially rejecting the effects of parasitic feed-through capacitance.

AB - Thin-film MEMS bridges as micro-resonators have proven attractive for various sensing applications (acceleration, mass, chemical, pressure, etc.) by using frequency shift as a basis for sensing [1]. Low-temperature processing of amorphous-silicon (a-Si:H) enables low-cost fabrication of high-Q MEMS bridges having excellent compatibility with CMOS post processing. However, the a-Si:H bridges have weak motional conductances [2]. Parasitic feed-through capacitances, both due to the device structure and routing, can easily drown out the resonant behavior. This paper proposes a non-contact MEMS interfacing and readout system in standard CMOS which enables robust integration while substantially rejecting the effects of parasitic feed-through capacitance.

UR - http://www.scopus.com/inward/record.url?scp=84905653387&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84905653387&partnerID=8YFLogxK

U2 - 10.1109/VLSIC.2014.6858442

DO - 10.1109/VLSIC.2014.6858442

M3 - Conference contribution

AN - SCOPUS:84905653387

SN - 9781479933273

T3 - IEEE Symposium on VLSI Circuits, Digest of Technical Papers

BT - 2014 Symposium on VLSI Circuits, VLSIC 2014 - Digest of Technical Papers

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 28th IEEE Symposium on VLSI Circuits, VLSIC 2014

Y2 - 10 June 2014 through 13 June 2014

ER -

Huang L, Rieutort-Louis W, Gualdino A, Teagno L, Hu Y, Mouro J et al. An ASIC for readout of post-processed thin-film MEMS resonators by employing capacitive interfacing and active parasitic cancellation. In 2014 Symposium on VLSI Circuits, VLSIC 2014 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc. 2014. 6858442. (IEEE Symposium on VLSI Circuits, Digest of Technical Papers). doi: 10.1109/VLSIC.2014.6858442

An ASIC for readout of post-processed thin-film MEMS resonators by employing capacitive interfacing and active parasitic cancellation

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this