Amorphous silicon thin-film transistors with DC saturation current half-life of more than 100 years

Bahman Hekmatshoar, Kunigunde H. Cherenack, Sigurd Wagner, James Christopher Sturm

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

Abstract

We report amorphous silicon thin film transistors (a-Si TFT's) with an extrapolated DC saturation current half-life of more than 100 years, an improvement of over 1000 times compared to the previous art (1-4). This TFT half-life is higher than the luminance half-life of high-quality green phosphorescent OLED's, showing that the TFT's are promising for driving OLED's in active-matrix OLED displays.

Original languageEnglish (US)
Title of host publication2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs
StatePublished - Dec 1 2008
Event2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States
Duration: Dec 15 2008Dec 17 2008

Other

Other2008 IEEE International Electron Devices Meeting, IEDM 2008
CountryUnited States
CitySan Francisco, CA
Period12/15/0812/17/08

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Amorphous silicon thin-film transistors with DC saturation current half-life of more than 100 years'. Together they form a unique fingerprint.

  • Cite this

    Hekmatshoar, B., Cherenack, K. H., Wagner, S., & Sturm, J. C. (2008). Amorphous silicon thin-film transistors with DC saturation current half-life of more than 100 years. In 2008 IEEE International Electron Devices Meeting, IEDM 2008 [4796621] https://doi.org/10.1109/IEDM.2008.4796621