Abstract
We report amorphous silicon thin film transistors (a-Si TFT's) with an extrapolated DC saturation current half-life of more than 100 years, an improvement of over 1000 times compared to the previous art (1-4). This TFT half-life is higher than the luminance half-life of high-quality green phosphorescent OLED's, showing that the TFT's are promising for driving OLED's in active-matrix OLED displays.
Original language | English (US) |
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Title of host publication | 2008 IEEE International Electron Devices Meeting, IEDM 2008 |
DOIs | |
State | Published - Dec 1 2008 |
Event | 2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States Duration: Dec 15 2008 → Dec 17 2008 |
Other
Other | 2008 IEEE International Electron Devices Meeting, IEDM 2008 |
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Country/Territory | United States |
City | San Francisco, CA |
Period | 12/15/08 → 12/17/08 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry