Amorphous silicon thin-film transistors with DC saturation current half-life of more than 100 years

Bahman Hekmatshoar; Kunigunde H. Cherenack; Sigurd Wagner; James C. Sturm

doi:10.1109/IEDM.2008.4796621

Amorphous silicon thin-film transistors with DC saturation current half-life of more than 100 years

Bahman Hekmatshoar, Kunigunde H. Cherenack, Sigurd Wagner, James C. Sturm

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

10 Scopus citations

Abstract

We report amorphous silicon thin film transistors (a-Si TFT's) with an extrapolated DC saturation current half-life of more than 100 years, an improvement of over 1000 times compared to the previous art (1-4). This TFT half-life is higher than the luminance half-life of high-quality green phosphorescent OLED's, showing that the TFT's are promising for driving OLED's in active-matrix OLED displays.

Original language	English (US)
Title of host publication	2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs	https://doi.org/10.1109/IEDM.2008.4796621
State	Published - 2008
Event	2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States Duration: Dec 15 2008 → Dec 17 2008

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2008 IEEE International Electron Devices Meeting, IEDM 2008
Country/Territory	United States
City	San Francisco, CA
Period	12/15/08 → 12/17/08

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2008.4796621

Cite this

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title = "Amorphous silicon thin-film transistors with DC saturation current half-life of more than 100 years",

abstract = "We report amorphous silicon thin film transistors (a-Si TFT's) with an extrapolated DC saturation current half-life of more than 100 years, an improvement of over 1000 times compared to the previous art (1-4). This TFT half-life is higher than the luminance half-life of high-quality green phosphorescent OLED's, showing that the TFT's are promising for driving OLED's in active-matrix OLED displays.",

author = "Bahman Hekmatshoar and Cherenack, {Kunigunde H.} and Sigurd Wagner and Sturm, {James C.}",

year = "2008",

doi = "10.1109/IEDM.2008.4796621",

language = "English (US)",

isbn = "9781424423781",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

booktitle = "2008 IEEE International Electron Devices Meeting, IEDM 2008",

note = "2008 IEEE International Electron Devices Meeting, IEDM 2008 ; Conference date: 15-12-2008 Through 17-12-2008",

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Hekmatshoar, B, Cherenack, KH, Wagner, S & Sturm, JC 2008, Amorphous silicon thin-film transistors with DC saturation current half-life of more than 100 years. in 2008 IEEE International Electron Devices Meeting, IEDM 2008., 4796621, Technical Digest - International Electron Devices Meeting, IEDM, 2008 IEEE International Electron Devices Meeting, IEDM 2008, San Francisco, CA, United States, 12/15/08. https://doi.org/10.1109/IEDM.2008.4796621

Amorphous silicon thin-film transistors with DC saturation current half-life of more than 100 years. / Hekmatshoar, Bahman; Cherenack, Kunigunde H.; Wagner, Sigurd et al.
2008 IEEE International Electron Devices Meeting, IEDM 2008. 2008. 4796621 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Cherenack, Kunigunde H.

AU - Wagner, Sigurd

AU - Sturm, James C.

PY - 2008

Y1 - 2008

N2 - We report amorphous silicon thin film transistors (a-Si TFT's) with an extrapolated DC saturation current half-life of more than 100 years, an improvement of over 1000 times compared to the previous art (1-4). This TFT half-life is higher than the luminance half-life of high-quality green phosphorescent OLED's, showing that the TFT's are promising for driving OLED's in active-matrix OLED displays.

AB - We report amorphous silicon thin film transistors (a-Si TFT's) with an extrapolated DC saturation current half-life of more than 100 years, an improvement of over 1000 times compared to the previous art (1-4). This TFT half-life is higher than the luminance half-life of high-quality green phosphorescent OLED's, showing that the TFT's are promising for driving OLED's in active-matrix OLED displays.

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T2 - 2008 IEEE International Electron Devices Meeting, IEDM 2008

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Amorphous silicon thin-film transistors with DC saturation current half-life of more than 100 years

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