Amorphous silicon thin-film transistors with DC saturation current half-life of more than 100 years

Bahman Hekmatshoar; Kunigunde H. Cherenack; Sigurd Wagner; James Christopher Sturm

doi:10.1109/IEDM.2008.4796621

Amorphous silicon thin-film transistors with DC saturation current half-life of more than 100 years

Bahman Hekmatshoar, Kunigunde H. Cherenack, Sigurd Wagner, James Christopher Sturm

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

10 Scopus citations

Abstract

We report amorphous silicon thin film transistors (a-Si TFT's) with an extrapolated DC saturation current half-life of more than 100 years, an improvement of over 1000 times compared to the previous art (1-4). This TFT half-life is higher than the luminance half-life of high-quality green phosphorescent OLED's, showing that the TFT's are promising for driving OLED's in active-matrix OLED displays.

Original language	English (US)
Title of host publication	2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs	https://doi.org/10.1109/IEDM.2008.4796621
State	Published - Dec 1 2008
Event	2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States Duration: Dec 15 2008 → Dec 17 2008

Other

Other	2008 IEEE International Electron Devices Meeting, IEDM 2008
Country/Territory	United States
City	San Francisco, CA
Period	12/15/08 → 12/17/08

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2008.4796621

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title = "Amorphous silicon thin-film transistors with DC saturation current half-life of more than 100 years",

abstract = "We report amorphous silicon thin film transistors (a-Si TFT's) with an extrapolated DC saturation current half-life of more than 100 years, an improvement of over 1000 times compared to the previous art (1-4). This TFT half-life is higher than the luminance half-life of high-quality green phosphorescent OLED's, showing that the TFT's are promising for driving OLED's in active-matrix OLED displays.",

author = "Bahman Hekmatshoar and Cherenack, {Kunigunde H.} and Sigurd Wagner and Sturm, {James Christopher}",

year = "2008",

month = dec,

day = "1",

doi = "10.1109/IEDM.2008.4796621",

language = "English (US)",

isbn = "9781424423781",

booktitle = "2008 IEEE International Electron Devices Meeting, IEDM 2008",

note = "2008 IEEE International Electron Devices Meeting, IEDM 2008 ; Conference date: 15-12-2008 Through 17-12-2008",

}

Hekmatshoar, B, Cherenack, KH, Wagner, S & Sturm, JC 2008, Amorphous silicon thin-film transistors with DC saturation current half-life of more than 100 years. in 2008 IEEE International Electron Devices Meeting, IEDM 2008., 4796621, 2008 IEEE International Electron Devices Meeting, IEDM 2008, San Francisco, CA, United States, 12/15/08. https://doi.org/10.1109/IEDM.2008.4796621

TY - GEN

T1 - Amorphous silicon thin-film transistors with DC saturation current half-life of more than 100 years

AU - Hekmatshoar, Bahman

AU - Cherenack, Kunigunde H.

AU - Wagner, Sigurd

AU - Sturm, James Christopher

PY - 2008/12/1

Y1 - 2008/12/1

N2 - We report amorphous silicon thin film transistors (a-Si TFT's) with an extrapolated DC saturation current half-life of more than 100 years, an improvement of over 1000 times compared to the previous art (1-4). This TFT half-life is higher than the luminance half-life of high-quality green phosphorescent OLED's, showing that the TFT's are promising for driving OLED's in active-matrix OLED displays.

AB - We report amorphous silicon thin film transistors (a-Si TFT's) with an extrapolated DC saturation current half-life of more than 100 years, an improvement of over 1000 times compared to the previous art (1-4). This TFT half-life is higher than the luminance half-life of high-quality green phosphorescent OLED's, showing that the TFT's are promising for driving OLED's in active-matrix OLED displays.

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U2 - 10.1109/IEDM.2008.4796621

DO - 10.1109/IEDM.2008.4796621

M3 - Conference contribution

AN - SCOPUS:64549132891

SN - 9781424423781

BT - 2008 IEEE International Electron Devices Meeting, IEDM 2008

T2 - 2008 IEEE International Electron Devices Meeting, IEDM 2008

Y2 - 15 December 2008 through 17 December 2008

ER -

Amorphous silicon thin-film transistors with DC saturation current half-life of more than 100 years

Abstract

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All Science Journal Classification (ASJC) codes

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