Amorphous-silicon thin-film transistors made at 28°C on clear-plastic substrates by interfacial stress engineering

Engineering & Materials Science

• Amorphous silicon 100%
• Thin film transistors 93%
• Plastics 53%
• Substrates 51%
• Thermal expansion 21%
• Temperature 16%
• Organic polymers 16%
• Flexible displays 15%
• Plasma enhanced chemical vapor deposition 14%
• Silicon nitride 12%
• Glass transition 11%
• Superconducting transition temperature 11%
• Leakage currents 11%
• Fabrication 7%

Physics & Astronomy

• amorphous silicon 67%
• transistors 58%
• plastics 56%
• engineering 54%
• thin films 37%
• thermal expansion 18%
• coefficients 11%
• silicon nitrides 10%
• glass transition temperature 9%
• temperature 9%
• leakage 8%
• vapor deposition 8%
• fabrication 6%
• polymers 6%
• performance 4%
• interactions 4%

Chemical Compounds

• Amorphous Silicon 99%
• Thermal Expansion 22%
• Leakage Current 13%
• Plasma Enhanced Chemical Vapour Deposition 12%
• Nitride 10%
• Glass Transition Temperature 8%
• Compound Mobility 7%
• Liquid Film 5%