Amorphous-silicon thin-film transistors fabricated at 300 °C on a free-standing foil substrate of clear plastic

Kunigunde H. Cherenack, Alex Z. Kattamis, Bahman Hekmatshoar, James Christopher Sturm, Sigurd Wagner

Research output: Contribution to journalArticle

62 Scopus citations

Abstract

We have made hydrogenated amorphous-silicon thin-film transistors (TFTs) at a process temperature of 300 °C on free-standing clear-plastic foil substrates. The key to the achievement of flat and smooth samples was to design the mechanical stresses in the substrate passivation and transistor layers, allowing us to obtain functional transistors over the entire active surface. Back-channel-passivated TFTs made at 300 °C on glass substrates and plastic substrates have identical electrical characteristics and gate-bias-stress stability. These results suggest that free-standing clear-plastic foil can replace display glass as a substrate from the points of process temperature, substrate and device integrity, and TFT performance and stability.

Original languageEnglish (US)
Pages (from-to)1004-1006
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number11
DOIs
StatePublished - Nov 1 2007

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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