Amorphous silicon thin film transistor backplanes fabricated at high temperature for flexible displays

I. Chun Cheng; Sigurd Wagner; Alexis Z. Kattamis; Bahman Hekmatshoar; Kunigunde H. Cherenack; Helena Gleskova; James Christopher Sturm

Amorphous silicon thin film transistor backplanes fabricated at high temperature for flexible displays

I. Chun Cheng, Sigurd Wagner, Alexis Z. Kattamis, Bahman Hekmatshoar, Kunigunde H. Cherenack, Helena Gleskova, James Christopher Sturm

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We describe the fabrication at high temperature of a-Si:H thin-film transistors and arrays for flexible backplanes on plastic or steel foil substrates. Plastic substrates of high-temperature processable clear polymers with low coefficient of thermal expansion and stainless steel are used. Asfabricated performance and bias-stress stability of transistors made at 150°C to 280°C are compared. Performance and stability like on glass are achieved. Dimensional stability of plastic substrates remains an issue that can be partially addressed by techniques for self-alignment. Stainless steel foil substrates offer high temperature tolerance and high dimensional stability, but must be carefully planarized electrically insulated prior to backplane fabrication.

Original language	English (US)
Title of host publication	IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings
Pages	311-314
Number of pages	4
State	Published - Dec 1 2007
Event	International Display Manufacturing Conference and Exhibition, IDMC 2007 - Taipei, Taiwan, Province of China Duration: Jul 3 2007 → Jul 6 2007

Publication series

Name	IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings

Other

Other	International Display Manufacturing Conference and Exhibition, IDMC 2007
Country	Taiwan, Province of China
City	Taipei
Period	7/3/07 → 7/6/07

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials

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Cheng, I. C., Wagner, S., Kattamis, A. Z., Hekmatshoar, B., Cherenack, K. H., Gleskova, H., & Sturm, J. C. (2007). Amorphous silicon thin film transistor backplanes fabricated at high temperature for flexible displays. In IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings (pp. 311-314). (IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings).

Cheng, I. Chun ; Wagner, Sigurd ; Kattamis, Alexis Z. ; Hekmatshoar, Bahman ; Cherenack, Kunigunde H. ; Gleskova, Helena ; Sturm, James Christopher. / Amorphous silicon thin film transistor backplanes fabricated at high temperature for flexible displays. IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings. 2007. pp. 311-314 (IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings).

@inproceedings{cc514974606e45c39316822e14b601e4,

title = "Amorphous silicon thin film transistor backplanes fabricated at high temperature for flexible displays",

abstract = "We describe the fabrication at high temperature of a-Si:H thin-film transistors and arrays for flexible backplanes on plastic or steel foil substrates. Plastic substrates of high-temperature processable clear polymers with low coefficient of thermal expansion and stainless steel are used. Asfabricated performance and bias-stress stability of transistors made at 150°C to 280°C are compared. Performance and stability like on glass are achieved. Dimensional stability of plastic substrates remains an issue that can be partially addressed by techniques for self-alignment. Stainless steel foil substrates offer high temperature tolerance and high dimensional stability, but must be carefully planarized electrically insulated prior to backplane fabrication.",

author = "Cheng, {I. Chun} and Sigurd Wagner and Kattamis, {Alexis Z.} and Bahman Hekmatshoar and Cherenack, {Kunigunde H.} and Helena Gleskova and Sturm, {James Christopher}",

year = "2007",

month = dec,

day = "1",

language = "English (US)",

isbn = "9789572852248",

series = "IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings",

pages = "311--314",

booktitle = "IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings",

note = "International Display Manufacturing Conference and Exhibition, IDMC 2007 ; Conference date: 03-07-2007 Through 06-07-2007",

}

Cheng, IC, Wagner, S, Kattamis, AZ, Hekmatshoar, B, Cherenack, KH, Gleskova, H & Sturm, JC 2007, Amorphous silicon thin film transistor backplanes fabricated at high temperature for flexible displays. in IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings. IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings, pp. 311-314, International Display Manufacturing Conference and Exhibition, IDMC 2007, Taipei, Taiwan, Province of China, 7/3/07.

Amorphous silicon thin film transistor backplanes fabricated at high temperature for flexible displays. / Cheng, I. Chun; Wagner, Sigurd; Kattamis, Alexis Z.; Hekmatshoar, Bahman; Cherenack, Kunigunde H.; Gleskova, Helena; Sturm, James Christopher.

IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings. 2007. p. 311-314 (IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Amorphous silicon thin film transistor backplanes fabricated at high temperature for flexible displays

AU - Cheng, I. Chun

AU - Wagner, Sigurd

AU - Kattamis, Alexis Z.

AU - Hekmatshoar, Bahman

AU - Cherenack, Kunigunde H.

AU - Gleskova, Helena

AU - Sturm, James Christopher

PY - 2007/12/1

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N2 - We describe the fabrication at high temperature of a-Si:H thin-film transistors and arrays for flexible backplanes on plastic or steel foil substrates. Plastic substrates of high-temperature processable clear polymers with low coefficient of thermal expansion and stainless steel are used. Asfabricated performance and bias-stress stability of transistors made at 150°C to 280°C are compared. Performance and stability like on glass are achieved. Dimensional stability of plastic substrates remains an issue that can be partially addressed by techniques for self-alignment. Stainless steel foil substrates offer high temperature tolerance and high dimensional stability, but must be carefully planarized electrically insulated prior to backplane fabrication.

AB - We describe the fabrication at high temperature of a-Si:H thin-film transistors and arrays for flexible backplanes on plastic or steel foil substrates. Plastic substrates of high-temperature processable clear polymers with low coefficient of thermal expansion and stainless steel are used. Asfabricated performance and bias-stress stability of transistors made at 150°C to 280°C are compared. Performance and stability like on glass are achieved. Dimensional stability of plastic substrates remains an issue that can be partially addressed by techniques for self-alignment. Stainless steel foil substrates offer high temperature tolerance and high dimensional stability, but must be carefully planarized electrically insulated prior to backplane fabrication.

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T3 - IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings

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BT - IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings

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Cheng IC, Wagner S, Kattamis AZ, Hekmatshoar B, Cherenack KH, Gleskova H et al. Amorphous silicon thin film transistor backplanes fabricated at high temperature for flexible displays. In IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings. 2007. p. 311-314. (IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings).