Amorphous silicon thin film transistor backplanes fabricated at high temperature for flexible displays

I. Chun Cheng, Sigurd Wagner, Alexis Z. Kattamis, Bahman Hekmatshoar, Kunigunde H. Cherenack, Helena Gleskova, James C. Sturm

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We describe the fabrication at high temperature of a-Si:H thin-film transistors and arrays for flexible backplanes on plastic or steel foil substrates. Plastic substrates of high-temperature processable clear polymers with low coefficient of thermal expansion and stainless steel are used. Asfabricated performance and bias-stress stability of transistors made at 150°C to 280°C are compared. Performance and stability like on glass are achieved. Dimensional stability of plastic substrates remains an issue that can be partially addressed by techniques for self-alignment. Stainless steel foil substrates offer high temperature tolerance and high dimensional stability, but must be carefully planarized electrically insulated prior to backplane fabrication.

Original languageEnglish (US)
Title of host publicationIDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings
Pages311-314
Number of pages4
StatePublished - 2007
EventInternational Display Manufacturing Conference and Exhibition, IDMC 2007 - Taipei, Taiwan, Province of China
Duration: Jul 3 2007Jul 6 2007

Publication series

NameIDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings

Other

OtherInternational Display Manufacturing Conference and Exhibition, IDMC 2007
Country/TerritoryTaiwan, Province of China
CityTaipei
Period7/3/077/6/07

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

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