Amorphous silicon TFT active-matrix OLED pixel

M. H. Lu; E. Ma; J. C. Sturm; S. Wagner

Amorphous silicon TFT active-matrix OLED pixel

M. H. Lu, E. Ma, J. C. Sturm, S. Wagner

Research output: Contribution to journal › Conference article › peer-review

Abstract

The fabrication of a video-brightness, active-matrix organic light emitting diode (AMOLED) with two-transistor-pixel based on amorphous silicon (a-Si) thin film transistor (TFT) technology and with a maximum process temperature of 350 °C is described. The TFT has a saturation mobility of 0.5-0.6 cm²/Vs, a V_T of 2.5 V and an on/off ratio of 10⁶-10⁷. Before OLED integration, the source of T2 is grounded in a DC measurement to demonstrate the basic sample and hold function of the pixel. After OLED integration, the operation of the pixel is demonstrated by driving a single pixel with signal timing consistent with VGA operation. The quantum efficiency and video brightness of the device is 1% (3 Cd/A) and 100 Cd/m², respectively.

Original language	English (US)
Pages (from-to)	130-131
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	1
State	Published - 1998
Event	Proceedings of the 1998 11th Annual Meeting IEEE Lasers and Electro-Optics Society, LEOS. Part 2 (of 2) - Orlando, FL, USA Duration: Dec 1 1998 → Dec 4 1998

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

@article{878dd470904b4d7cae3565f206e74f99,

title = "Amorphous silicon TFT active-matrix OLED pixel",

abstract = "The fabrication of a video-brightness, active-matrix organic light emitting diode (AMOLED) with two-transistor-pixel based on amorphous silicon (a-Si) thin film transistor (TFT) technology and with a maximum process temperature of 350 °C is described. The TFT has a saturation mobility of 0.5-0.6 cm2/Vs, a VT of 2.5 V and an on/off ratio of 106-107. Before OLED integration, the source of T2 is grounded in a DC measurement to demonstrate the basic sample and hold function of the pixel. After OLED integration, the operation of the pixel is demonstrated by driving a single pixel with signal timing consistent with VGA operation. The quantum efficiency and video brightness of the device is 1% (3 Cd/A) and 100 Cd/m2, respectively.",

author = "Lu, {M. H.} and E. Ma and Sturm, {J. C.} and S. Wagner",

year = "1998",

language = "English (US)",

volume = "1",

pages = "130--131",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1998 11th Annual Meeting IEEE Lasers and Electro-Optics Society, LEOS. Part 2 (of 2) ; Conference date: 01-12-1998 Through 04-12-1998",

}

TY - JOUR

T1 - Amorphous silicon TFT active-matrix OLED pixel

AU - Lu, M. H.

AU - Ma, E.

AU - Sturm, J. C.

AU - Wagner, S.

PY - 1998

Y1 - 1998

N2 - The fabrication of a video-brightness, active-matrix organic light emitting diode (AMOLED) with two-transistor-pixel based on amorphous silicon (a-Si) thin film transistor (TFT) technology and with a maximum process temperature of 350 °C is described. The TFT has a saturation mobility of 0.5-0.6 cm2/Vs, a VT of 2.5 V and an on/off ratio of 106-107. Before OLED integration, the source of T2 is grounded in a DC measurement to demonstrate the basic sample and hold function of the pixel. After OLED integration, the operation of the pixel is demonstrated by driving a single pixel with signal timing consistent with VGA operation. The quantum efficiency and video brightness of the device is 1% (3 Cd/A) and 100 Cd/m2, respectively.

AB - The fabrication of a video-brightness, active-matrix organic light emitting diode (AMOLED) with two-transistor-pixel based on amorphous silicon (a-Si) thin film transistor (TFT) technology and with a maximum process temperature of 350 °C is described. The TFT has a saturation mobility of 0.5-0.6 cm2/Vs, a VT of 2.5 V and an on/off ratio of 106-107. Before OLED integration, the source of T2 is grounded in a DC measurement to demonstrate the basic sample and hold function of the pixel. After OLED integration, the operation of the pixel is demonstrated by driving a single pixel with signal timing consistent with VGA operation. The quantum efficiency and video brightness of the device is 1% (3 Cd/A) and 100 Cd/m2, respectively.

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UR - http://www.scopus.com/inward/citedby.url?scp=0032287857&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032287857

SN - 1092-8081

VL - 1

SP - 130

EP - 131

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - Proceedings of the 1998 11th Annual Meeting IEEE Lasers and Electro-Optics Society, LEOS. Part 2 (of 2)

Y2 - 1 December 1998 through 4 December 1998

ER -

Amorphous silicon TFT active-matrix OLED pixel

Abstract

All Science Journal Classification (ASJC) codes

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