Amorphous silicon TFT active-matrix OLED pixel

M. H. Lu, E. Ma, J. C. Sturm, S. Wagner

Research output: Contribution to journalConference articlepeer-review

9 Scopus citations


The fabrication of a video-brightness, active-matrix organic light emitting diode (AMOLED) with two-transistor-pixel based on amorphous silicon (a-Si) thin film transistor (TFT) technology and with a maximum process temperature of 350 °C is described. The TFT has a saturation mobility of 0.5-0.6 cm2/Vs, a VT of 2.5 V and an on/off ratio of 106-107. Before OLED integration, the source of T2 is grounded in a DC measurement to demonstrate the basic sample and hold function of the pixel. After OLED integration, the operation of the pixel is demonstrated by driving a single pixel with signal timing consistent with VGA operation. The quantum efficiency and video brightness of the device is 1% (3 Cd/A) and 100 Cd/m2, respectively.

Original languageEnglish (US)
Pages (from-to)130-131
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
StatePublished - 1998
EventProceedings of the 1998 11th Annual Meeting IEEE Lasers and Electro-Optics Society, LEOS. Part 2 (of 2) - Orlando, FL, USA
Duration: Dec 1 1998Dec 4 1998

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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