Amorphous Si TFTs on plastically-deformed substrates with 3-D shapes

P. I. Hsu, H. Gleskova, Z. Suo, S. Wagner, James Christopher Sturm

Research output: Contribution to conferencePaper

Abstract

The fabrication of thin film transistors (TFT) on metal and plastic substrates and their subsequent plastic deformation was reported. The TFTs fabricated on patterned silicon nitride islands on polyimide substrates were shown to have reduced strain in the semiconductor islands. The devices retained their characteristics after the deformation as the carrier mobility and threshold voltage changed only nominally.

Original languageEnglish (US)
Pages193-194
Number of pages2
StatePublished - Jan 1 2001
EventDevice Research Conference (DRC) - Notre Dame, IN, United States
Duration: Jun 25 2001Jun 27 2001

Other

OtherDevice Research Conference (DRC)
CountryUnited States
CityNotre Dame, IN
Period6/25/016/27/01

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Hsu, P. I., Gleskova, H., Suo, Z., Wagner, S., & Sturm, J. C. (2001). Amorphous Si TFTs on plastically-deformed substrates with 3-D shapes. 193-194. Paper presented at Device Research Conference (DRC), Notre Dame, IN, United States.