Abstract
The surface-engineering techniques which can facilitate balanced ambipolar transport with high charge-carrier mobility in a blend of a terthiophene polymer with methanofullerene solution-processed into thin-film FET structures, were analyzed. It is found that amine-terminated silane monolayer leads to enhanced electron transport and low hole transport, with a positive-carrier-accumulation onset voltage of about -16 V. CMOS-like inverters have been built on a single substrate using two identical transistors with a channel length of 10 μ m. The results show that ambipolar blends of theino-[2,3-b]thiophene terthiophene polymer and PCBM were processed into thin-film field-effect transistors showing n- and p-type conduction under different bias conditions.
Original language | English (US) |
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Pages (from-to) | 2608-2612 |
Number of pages | 5 |
Journal | Advanced Materials |
Volume | 17 |
Issue number | 21 |
DOIs | |
State | Published - Nov 4 2005 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering