Al/TiO2/p-Si heterojunction as an ideal minority carrier electron injector for silicon photovoltaics

Janam Jhaveri, Alexander H. Berg, Sigurd Wagner, James C. Sturm

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Amorphous titanium dioxide (TiO2) several nm thick deposited on crystalline silicon at 100°C has been shown to block holes due to a large valence band offset and be transparent to electrons. In this work, using a combination of temperature-dependent I-V measurements and multiple p-type substrate types (CZ, FZ), we demonstrate that the dominant current mechanism in an Al/TiO2/p-Si heterojunction is the injection of electrons into the quasi-neutral silicon, implying a highly effective electron-selective contact.

Original languageEnglish (US)
Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2444-2447
Number of pages4
ISBN (Electronic)9781509027248
DOIs
StatePublished - Nov 18 2016
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: Jun 5 2016Jun 10 2016

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2016-November
ISSN (Print)0160-8371

Other

Other43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
CountryUnited States
CityPortland
Period6/5/166/10/16

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Keywords

  • Heterojunction
  • Metal-oxide
  • Photovoltaics
  • Selective Contact
  • Silicon
  • Solar
  • Titanium dioxide

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