Al/TiO 2 /p-Si heterojunction as an ideal minority carrier electron injector for silicon photovoltaics

Janam Jhaveri, Alexander H. Berg, Sigurd Wagner, James C. Sturm

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Amorphous titanium dioxide (TiO 2 ) several nm thick deposited on crystalline silicon at 100°C has been shown to block holes due to a large valence band offset and be transparent to electrons. In this work, using a combination of temperature-dependent I-V measurements and multiple p-type substrate types (CZ, FZ), we demonstrate that the dominant current mechanism in an Al/TiO2/p-Si heterojunction is the injection of electrons into the quasi-neutral silicon, implying a highly effective electron- selective contact.

Original languageEnglish (US)
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
ISBN (Electronic)9781509056057
DOIs
StatePublished - Jan 1 2017
Event44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
Duration: Jun 25 2017Jun 30 2017

Publication series

Name2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Other

Other44th IEEE Photovoltaic Specialist Conference, PVSC 2017
CountryUnited States
CityWashington
Period6/25/176/30/17

All Science Journal Classification (ASJC) codes

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Keywords

  • Heterojunction
  • Metal-oxide
  • Photovoltaics
  • Selective Contact
  • Silicon
  • Solar
  • Titanium dioxide

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  • Cite this

    Jhaveri, J., Berg, A. H., Wagner, S., & Sturm, J. C. (2017). Al/TiO 2 /p-Si heterojunction as an ideal minority carrier electron injector for silicon photovoltaics In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1-4). (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366563