Al/TiO                         2                         /p-Si heterojunction as an ideal minority carrier electron injector for silicon photovoltaics

Janam Jhaveri; Alexander H. Berg; Sigurd Wagner; James C. Sturm

doi:10.1109/PVSC.2017.8366563

Al/TiO ₂ /p-Si heterojunction as an ideal minority carrier electron injector for silicon photovoltaics

Janam Jhaveri, Alexander H. Berg, Sigurd Wagner, James C. Sturm

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Amorphous titanium dioxide (TiO ₂ ) several nm thick deposited on crystalline silicon at 100°C has been shown to block holes due to a large valence band offset and be transparent to electrons. In this work, using a combination of temperature-dependent I-V measurements and multiple p-type substrate types (CZ, FZ), we demonstrate that the dominant current mechanism in an Al/TiO2/p-Si heterojunction is the injection of electrons into the quasi-neutral silicon, implying a highly effective electron- selective contact.

Original language	English (US)
Title of host publication	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-4
Number of pages	4
ISBN (Electronic)	9781509056057
DOIs	https://doi.org/10.1109/PVSC.2017.8366563
State	Published - 2017
Event	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: Jun 25 2017 → Jun 30 2017

Publication series

Name	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Other

Other	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Country/Territory	United States
City	Washington
Period	6/25/17 → 6/30/17

All Science Journal Classification (ASJC) codes

Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Keywords

Heterojunction
Metal-oxide
Photovoltaics
Selective Contact
Silicon
Solar
Titanium dioxide

Access to Document

10.1109/PVSC.2017.8366563

Cite this

Jhaveri, J., Berg, A. H., Wagner, S., & Sturm, J. C. (2017). Al/TiO ₂ /p-Si heterojunction as an ideal minority carrier electron injector for silicon photovoltaics In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1-4). (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366563

Jhaveri, Janam ; Berg, Alexander H. ; Wagner, Sigurd et al. / Al/TiO ₂ /p-Si heterojunction as an ideal minority carrier electron injector for silicon photovoltaics 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1-4 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

@inproceedings{884685d443df41d69668a249f1dda657,

title = " Al/TiO 2 /p-Si heterojunction as an ideal minority carrier electron injector for silicon photovoltaics ",

abstract = " Amorphous titanium dioxide (TiO 2 ) several nm thick deposited on crystalline silicon at 100°C has been shown to block holes due to a large valence band offset and be transparent to electrons. In this work, using a combination of temperature-dependent I-V measurements and multiple p-type substrate types (CZ, FZ), we demonstrate that the dominant current mechanism in an Al/TiO2/p-Si heterojunction is the injection of electrons into the quasi-neutral silicon, implying a highly effective electron- selective contact. ",

keywords = "Heterojunction, Metal-oxide, Photovoltaics, Selective Contact, Silicon, Solar, Titanium dioxide",

author = "Janam Jhaveri and Berg, {Alexander H.} and Sigurd Wagner and Sturm, {James C.}",

note = "Funding Information: This work was supported by the DOE Sunshot Grant No. DEEE0005315, the National Science Foundation Princeton MRSEC Grant No. DMR-0819860 and the Princeton Institute for the Science and Technology of Materials MRSEC Grant No. DMR-0819860 and the Princeton Institute for the Science and Technology of Materials. Funding Information: This work was supported by the DOE Sunshot Grant No. DE-EE0005315, the National Science Foundation Princeton MRSEC Grant No. DMR-0819860 and the Princeton Institute for the Science and Technology of Materials MRSEC Grant No. DMR-0819860 and the Princeton Institute for the Science and Technology of Materials. Publisher Copyright: {\textcopyright} 2017 IEEE.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",

year = "2017",

doi = "10.1109/PVSC.2017.8366563",

language = "English (US)",

series = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1--4",

booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

address = "United States",

}

Jhaveri, J, Berg, AH, Wagner, S & Sturm, JC 2017, Al/TiO ₂ /p-Si heterojunction as an ideal minority carrier electron injector for silicon photovoltaics in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017, Institute of Electrical and Electronics Engineers Inc., pp. 1-4, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 6/25/17. https://doi.org/10.1109/PVSC.2017.8366563

Al/TiO ₂ /p-Si heterojunction as an ideal minority carrier electron injector for silicon photovoltaics . / Jhaveri, Janam; Berg, Alexander H.; Wagner, Sigurd et al.
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1-4 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Al/TiO 2 /p-Si heterojunction as an ideal minority carrier electron injector for silicon photovoltaics

AU - Jhaveri, Janam

AU - Berg, Alexander H.

AU - Wagner, Sigurd

AU - Sturm, James C.

N1 - Funding Information: This work was supported by the DOE Sunshot Grant No. DEEE0005315, the National Science Foundation Princeton MRSEC Grant No. DMR-0819860 and the Princeton Institute for the Science and Technology of Materials MRSEC Grant No. DMR-0819860 and the Princeton Institute for the Science and Technology of Materials. Funding Information: This work was supported by the DOE Sunshot Grant No. DE-EE0005315, the National Science Foundation Princeton MRSEC Grant No. DMR-0819860 and the Princeton Institute for the Science and Technology of Materials MRSEC Grant No. DMR-0819860 and the Princeton Institute for the Science and Technology of Materials. Publisher Copyright: © 2017 IEEE.

PY - 2017

Y1 - 2017

N2 - Amorphous titanium dioxide (TiO 2 ) several nm thick deposited on crystalline silicon at 100°C has been shown to block holes due to a large valence band offset and be transparent to electrons. In this work, using a combination of temperature-dependent I-V measurements and multiple p-type substrate types (CZ, FZ), we demonstrate that the dominant current mechanism in an Al/TiO2/p-Si heterojunction is the injection of electrons into the quasi-neutral silicon, implying a highly effective electron- selective contact.

AB - Amorphous titanium dioxide (TiO 2 ) several nm thick deposited on crystalline silicon at 100°C has been shown to block holes due to a large valence band offset and be transparent to electrons. In this work, using a combination of temperature-dependent I-V measurements and multiple p-type substrate types (CZ, FZ), we demonstrate that the dominant current mechanism in an Al/TiO2/p-Si heterojunction is the injection of electrons into the quasi-neutral silicon, implying a highly effective electron- selective contact.

KW - Heterojunction

KW - Metal-oxide

KW - Photovoltaics

KW - Selective Contact

KW - Silicon

KW - Solar

KW - Titanium dioxide

UR - http://www.scopus.com/inward/record.url?scp=85048500117&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85048500117&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2017.8366563

DO - 10.1109/PVSC.2017.8366563

M3 - Conference contribution

AN - SCOPUS:85048500117

T3 - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

SP - 1

EP - 4

BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017

Y2 - 25 June 2017 through 30 June 2017

ER -

Jhaveri J, Berg AH, Wagner S, Sturm JC. Al/TiO ₂ /p-Si heterojunction as an ideal minority carrier electron injector for silicon photovoltaics In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1-4. (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). doi: 10.1109/PVSC.2017.8366563