AlN films on GaN: Sources of error in the photoemission measurement of electron affinity

V. M. Bermudez; C. I. Wu; Antoine Kahn

doi:10.1063/1.1333716

AlN films on GaN: Sources of error in the photoemission measurement of electron affinity

V. M. Bermudez, C. I. Wu, Antoine Kahn

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Abstract

This communication corrects an error in the value previously reported by one of the authors for the electron affinity (EA) of AlN. A brief discussion is given of the potential errors in photoemission measurements of EA which affect this and other studies. Finally, a recommendation is given for 1.9 eV as the "true" EA of wurtzite AlN.

Original language	English (US)
Pages (from-to)	1991
Number of pages	1
Journal	Journal of Applied Physics
Volume	89
Issue number	3
DOIs	https://doi.org/10.1063/1.1333716
State	Published - Feb 1 2001

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.1333716

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title = "AlN films on GaN: Sources of error in the photoemission measurement of electron affinity",

abstract = "This communication corrects an error in the value previously reported by one of the authors for the electron affinity (EA) of AlN. A brief discussion is given of the potential errors in photoemission measurements of EA which affect this and other studies. Finally, a recommendation is given for 1.9 eV as the {"}true{"} EA of wurtzite AlN.",

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T2 - Sources of error in the photoemission measurement of electron affinity

AU - Bermudez, V. M.

AU - Wu, C. I.

AU - Kahn, Antoine

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Y1 - 2001/2/1

N2 - This communication corrects an error in the value previously reported by one of the authors for the electron affinity (EA) of AlN. A brief discussion is given of the potential errors in photoemission measurements of EA which affect this and other studies. Finally, a recommendation is given for 1.9 eV as the "true" EA of wurtzite AlN.

AB - This communication corrects an error in the value previously reported by one of the authors for the electron affinity (EA) of AlN. A brief discussion is given of the potential errors in photoemission measurements of EA which affect this and other studies. Finally, a recommendation is given for 1.9 eV as the "true" EA of wurtzite AlN.

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U2 - 10.1063/1.1333716

DO - 10.1063/1.1333716

M3 - Article

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SN - 0021-8979

VL - 89

SP - 1991

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

ER -

AlN films on GaN: Sources of error in the photoemission measurement of electron affinity

Abstract

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