AlN films on GaN: Sources of error in the photoemission measurement of electron affinity

V. M. Bermudez, C. I. Wu, Antoine Kahn

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

This communication corrects an error in the value previously reported by one of the authors for the electron affinity (EA) of AlN. A brief discussion is given of the potential errors in photoemission measurements of EA which affect this and other studies. Finally, a recommendation is given for 1.9 eV as the "true" EA of wurtzite AlN.

Original languageEnglish (US)
Number of pages1
JournalJournal of Applied Physics
Volume89
Issue number3
DOIs
StatePublished - Feb 1 2001

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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