TY - JOUR
T1 - All-Polymer Bulk-Heterojunction Organic Electrochemical Transistors with Balanced Ionic and Electronic Transport
AU - Wu, Xihu
AU - Tam, Teck Lip Dexter
AU - Chen, Shuai
AU - Salim, Teddy
AU - Zhao, Xiaoming
AU - Zhou, Zhongliang
AU - Lin, Ming
AU - Xu, Jianwei
AU - Loo, Yueh Lin
AU - Leong, Wei Lin
N1 - Funding Information:
W.L.L. acknowledges funding support from Ministry of Education (MOE) under AcRF Tier 2 grant (MOE2019‐T2‐2‐106) and National Robotics Programme (W1925d0106). The authors would like to acknowledge the Facility for Analysis, Characterization, Testing and Simulation (FACTS), Nanyang Technological University, Singapore, for use of their XPS facility and the School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, for use of their AFM facility. The authors thank Dr. Esther Tsai and Dr. Ruipeng Li for help with X‐ray scattering measurements, which were conducted at the Center for Functional Nanomaterials (CFN) and the Complex Materials Scattering (CMS) beamline of the National Synchrotron Light Source II (NSLS‐II), which both are U.S. DOE Office of Science Facilities, at Brookhaven National Laboratory under Contract No. DE‐SC0012704.
Funding Information:
W.L.L. acknowledges funding support from Ministry of Education (MOE) under AcRF Tier 2 grant (MOE2019-T2-2-106) and National Robotics Programme (W1925d0106). The authors would like to acknowledge the Facility for Analysis, Characterization, Testing and Simulation (FACTS), Nanyang Technological University, Singapore, for use of their XPS facility and the School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, for use of their AFM facility. The authors thank Dr. Esther Tsai and Dr. Ruipeng Li for help with X-ray scattering measurements, which were conducted at the Center for Functional Nanomaterials (CFN) and the Complex Materials Scattering (CMS) beamline of the National Synchrotron Light Source II (NSLS-II), which both are U.S. DOE Office of Science Facilities, at Brookhaven National Laboratory under Contract No. DE-SC0012704.
Publisher Copyright:
© 2022 Wiley-VCH GmbH.
PY - 2022/10/20
Y1 - 2022/10/20
N2 - The rapid development of organic electrochemical transistor (OECTs)-based circuits brings new opportunities for next-generation integrated bioelectronics. The all-polymer bulk-heterojunction (BHJ) offers an attractive, inexpensive alternative to achieve efficient ambipolar OECTs, and building blocks of logic circuits constructed from them, but have not been investigated to date. Here, the first all-polymer BHJ-based OECTs are reported, consisting of a blend of new p-type ladder conjugated polymer and a state-of-the-art n-type ladder polymer. The whole ladder-type polymer BHJ also proves that side chains are not necessary for good ion transport. Instead, the polymer nanostructures play a critical role in the ion penetration and transportation and thus in the device performance. It also provides a facile strategy and simplifies the fabrication process, forgoing the need to pattern multiple active layers. In addition, the development of complementary metal–oxide–semiconductor (CMOS)-like OECTs allows the pursuit of advanced functional logic circuitry, including inverters and NAND gates, as well as for amplifying electrophysiology signals. This work opens a new approach to the design of new materials for OECTs and will contribute to the development of organic heterojunctions for ambipolar OECTs toward high-performing logic circuits.
AB - The rapid development of organic electrochemical transistor (OECTs)-based circuits brings new opportunities for next-generation integrated bioelectronics. The all-polymer bulk-heterojunction (BHJ) offers an attractive, inexpensive alternative to achieve efficient ambipolar OECTs, and building blocks of logic circuits constructed from them, but have not been investigated to date. Here, the first all-polymer BHJ-based OECTs are reported, consisting of a blend of new p-type ladder conjugated polymer and a state-of-the-art n-type ladder polymer. The whole ladder-type polymer BHJ also proves that side chains are not necessary for good ion transport. Instead, the polymer nanostructures play a critical role in the ion penetration and transportation and thus in the device performance. It also provides a facile strategy and simplifies the fabrication process, forgoing the need to pattern multiple active layers. In addition, the development of complementary metal–oxide–semiconductor (CMOS)-like OECTs allows the pursuit of advanced functional logic circuitry, including inverters and NAND gates, as well as for amplifying electrophysiology signals. This work opens a new approach to the design of new materials for OECTs and will contribute to the development of organic heterojunctions for ambipolar OECTs toward high-performing logic circuits.
KW - balanced charge transport
KW - heterojunctions
KW - ladder-type polymers
KW - organic electrochemical transistors
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U2 - 10.1002/adma.202206118
DO - 10.1002/adma.202206118
M3 - Article
C2 - 36008368
AN - SCOPUS:85137858464
SN - 0935-9648
VL - 34
JO - Advanced Materials
JF - Advanced Materials
IS - 42
M1 - 2206118
ER -