All-optical switching in an asymmetric silicon Fabry-Perot étalon based on the free-carrier plasma effect

Y. M. Liu; X. Xiao; P. R. Prucnal; J. C. Sturm

doi:10.1364/AO.33.003871

All-optical switching in an asymmetric silicon Fabry-Perot étalon based on the free-carrier plasma effect

Y. M. Liu
, X. Xiao
, P. R. Prucnal
, J. C. Sturm

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We demonstrate all-optical switching at 1.3 and 1.5 μm in the reflection mode of an asymmetric silicon Fabry-Perot étalon by a control beam at 0.85 μm. Both switch-on and switch-off operations are demonstrated at different locations of the etalon. Based on the free-carrier plasma effect, a modulation depth as large as 10% is obtained and a frequency response as high as 0.5 GHz is achieved.

Original language	English (US)
Pages (from-to)	3871-3874
Number of pages	4
Journal	Applied Optics
Volume	33
Issue number	18
DOIs	https://doi.org/10.1364/AO.33.003871
State	Published - Jun 20 1994

All Science Journal Classification (ASJC) codes

Engineering (miscellaneous)
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1364/AO.33.003871

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abstract = "We demonstrate all-optical switching at 1.3 and 1.5 μm in the reflection mode of an asymmetric silicon Fabry-Perot {\'e}talon by a control beam at 0.85 μm. Both switch-on and switch-off operations are demonstrated at different locations of the etalon. Based on the free-carrier plasma effect, a modulation depth as large as 10\% is obtained and a frequency response as high as 0.5 GHz is achieved.",

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AU - Liu, Y. M.

AU - Xiao, X.

AU - Prucnal, P. R.

AU - Sturm, J. C.

PY - 1994/6/20

Y1 - 1994/6/20

N2 - We demonstrate all-optical switching at 1.3 and 1.5 μm in the reflection mode of an asymmetric silicon Fabry-Perot étalon by a control beam at 0.85 μm. Both switch-on and switch-off operations are demonstrated at different locations of the etalon. Based on the free-carrier plasma effect, a modulation depth as large as 10% is obtained and a frequency response as high as 0.5 GHz is achieved.

AB - We demonstrate all-optical switching at 1.3 and 1.5 μm in the reflection mode of an asymmetric silicon Fabry-Perot étalon by a control beam at 0.85 μm. Both switch-on and switch-off operations are demonstrated at different locations of the etalon. Based on the free-carrier plasma effect, a modulation depth as large as 10% is obtained and a frequency response as high as 0.5 GHz is achieved.

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JO - Applied Optics

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IS - 18

ER -

All-optical switching in an asymmetric silicon Fabry-Perot étalon based on the free-carrier plasma effect

Abstract

All Science Journal Classification (ASJC) codes

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