We demonstrate all-optical switching at 1.3 and 1.5 μm in the reflection mode of an asymmetric silicon Fabry-Perot étalon by a control beam at 0.85 μm. Both switch-on and switch-off operations are demonstrated at different locations of the etalon. Based on the free-carrier plasma effect, a modulation depth as large as 10% is obtained and a frequency response as high as 0.5 GHz is achieved.
|Original language||English (US)|
|Number of pages||4|
|State||Published - Jun 20 1994|
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Engineering (miscellaneous)
- Electrical and Electronic Engineering