Abstract
We demonstrate all-optical switching at 1.3 and 1.5 μm in the reflection mode of an asymmetric silicon Fabry-Perot étalon by a control beam at 0.85 μm. Both switch-on and switch-off operations are demonstrated at different locations of the etalon. Based on the free-carrier plasma effect, a modulation depth as large as 10% is obtained and a frequency response as high as 0.5 GHz is achieved.
Original language | English (US) |
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Pages (from-to) | 3871-3874 |
Number of pages | 4 |
Journal | Applied Optics |
Volume | 33 |
Issue number | 18 |
DOIs | |
State | Published - Jun 20 1994 |
All Science Journal Classification (ASJC) codes
- Engineering (miscellaneous)
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering