All-inkjet printed organic transistors: Dielectric surface passivation techniques for improved operational stability and lifetime

H. L. Gomes; M. C.R. Medeiros; F. Villani; J. Canudo; F. Loffredo; R. Miscioscia; C. Martinez-Domingo; E. Ramon; E. Sowade; K. Y. Mitra; R. R. Baumann; I. McCulloch; J. Carrabina

doi:10.1016/j.microrel.2015.05.006

All-inkjet printed organic transistors: Dielectric surface passivation techniques for improved operational stability and lifetime

H. L. Gomes, M. C.R. Medeiros, F. Villani, J. Canudo, F. Loffredo, R. Miscioscia, C. Martinez-Domingo, E. Ramon, E. Sowade, K. Y. Mitra, R. R. Baumann, I. McCulloch, J. Carrabina

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

Abstract We report about the use of a printed pentafluorothiophenol layer on top of the dielectric surface as a passivation coating to improve the operational stability of all-ink-jet printed transistors. Transistors with bottom-gate structure were fabricated using cross-linked poly-4-vinylphenol (c-PVP) as dielectric layer and an ink formulation of an amorphous triarylamine polymer as semiconductor. The resulting TFTs had low turn-on voltage (V_th < |5 V|) and a mobility ≈0.1 cm²/(V s). A comparison of identically fabricated transistors shows that devices with coated dielectric have a higher operational stability than those using bare c-PVP. This conclusion is supported by a quantitative study of the threshold voltage shift with time under continuous operation. Long exposure to the ambient atmosphere causes an increase in the threshold voltage strongly dependent on the used semiconducting ink formulation.

Original language	English (US)
Article number	11536
Pages (from-to)	1192-1195
Number of pages	4
Journal	Microelectronics Reliability
Volume	55
Issue number	8
DOIs	https://doi.org/10.1016/j.microrel.2015.05.006
State	Published - Jul 1 2015
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Safety, Risk, Reliability and Quality
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Keywords

Ageing
All-inkjet printed devices
Operational stability
Organic electronics

Access to Document

10.1016/j.microrel.2015.05.006

Cite this

Gomes, H. L., Medeiros, M. C. R., Villani, F., Canudo, J., Loffredo, F., Miscioscia, R., Martinez-Domingo, C., Ramon, E., Sowade, E., Mitra, K. Y., Baumann, R. R., McCulloch, I., & Carrabina, J. (2015). All-inkjet printed organic transistors: Dielectric surface passivation techniques for improved operational stability and lifetime. Microelectronics Reliability, 55(8), 1192-1195. Article 11536. https://doi.org/10.1016/j.microrel.2015.05.006

@article{47e43a57538f46ff8fdbce28f86512aa,

title = "All-inkjet printed organic transistors: Dielectric surface passivation techniques for improved operational stability and lifetime",

abstract = "Abstract We report about the use of a printed pentafluorothiophenol layer on top of the dielectric surface as a passivation coating to improve the operational stability of all-ink-jet printed transistors. Transistors with bottom-gate structure were fabricated using cross-linked poly-4-vinylphenol (c-PVP) as dielectric layer and an ink formulation of an amorphous triarylamine polymer as semiconductor. The resulting TFTs had low turn-on voltage (Vth < |5 V|) and a mobility ≈0.1 cm2/(V s). A comparison of identically fabricated transistors shows that devices with coated dielectric have a higher operational stability than those using bare c-PVP. This conclusion is supported by a quantitative study of the threshold voltage shift with time under continuous operation. Long exposure to the ambient atmosphere causes an increase in the threshold voltage strongly dependent on the used semiconducting ink formulation.",

keywords = "Ageing, All-inkjet printed devices, Operational stability, Organic electronics",

author = "Gomes, {H. L.} and Medeiros, {M. C.R.} and F. Villani and J. Canudo and F. Loffredo and R. Miscioscia and C. Martinez-Domingo and E. Ramon and E. Sowade and Mitra, {K. Y.} and Baumann, {R. R.} and I. McCulloch and J. Carrabina",

note = "Publisher Copyright: {\textcopyright} 2015 Elsevier Ltd.",

year = "2015",

month = jul,

day = "1",

doi = "10.1016/j.microrel.2015.05.006",

language = "English (US)",

volume = "55",

pages = "1192--1195",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Ltd",

number = "8",

}

Gomes, HL, Medeiros, MCR, Villani, F, Canudo, J, Loffredo, F, Miscioscia, R, Martinez-Domingo, C, Ramon, E, Sowade, E, Mitra, KY, Baumann, RR, McCulloch, I & Carrabina, J 2015, 'All-inkjet printed organic transistors: Dielectric surface passivation techniques for improved operational stability and lifetime', Microelectronics Reliability, vol. 55, no. 8, 11536, pp. 1192-1195. https://doi.org/10.1016/j.microrel.2015.05.006

TY - JOUR

T1 - All-inkjet printed organic transistors

T2 - Dielectric surface passivation techniques for improved operational stability and lifetime

AU - Gomes, H. L.

AU - Medeiros, M. C.R.

AU - Villani, F.

AU - Canudo, J.

AU - Loffredo, F.

AU - Miscioscia, R.

AU - Martinez-Domingo, C.

AU - Ramon, E.

AU - Sowade, E.

AU - Mitra, K. Y.

AU - Baumann, R. R.

AU - McCulloch, I.

AU - Carrabina, J.

PY - 2015/7/1

Y1 - 2015/7/1

N2 - Abstract We report about the use of a printed pentafluorothiophenol layer on top of the dielectric surface as a passivation coating to improve the operational stability of all-ink-jet printed transistors. Transistors with bottom-gate structure were fabricated using cross-linked poly-4-vinylphenol (c-PVP) as dielectric layer and an ink formulation of an amorphous triarylamine polymer as semiconductor. The resulting TFTs had low turn-on voltage (Vth < |5 V|) and a mobility ≈0.1 cm2/(V s). A comparison of identically fabricated transistors shows that devices with coated dielectric have a higher operational stability than those using bare c-PVP. This conclusion is supported by a quantitative study of the threshold voltage shift with time under continuous operation. Long exposure to the ambient atmosphere causes an increase in the threshold voltage strongly dependent on the used semiconducting ink formulation.

AB - Abstract We report about the use of a printed pentafluorothiophenol layer on top of the dielectric surface as a passivation coating to improve the operational stability of all-ink-jet printed transistors. Transistors with bottom-gate structure were fabricated using cross-linked poly-4-vinylphenol (c-PVP) as dielectric layer and an ink formulation of an amorphous triarylamine polymer as semiconductor. The resulting TFTs had low turn-on voltage (Vth < |5 V|) and a mobility ≈0.1 cm2/(V s). A comparison of identically fabricated transistors shows that devices with coated dielectric have a higher operational stability than those using bare c-PVP. This conclusion is supported by a quantitative study of the threshold voltage shift with time under continuous operation. Long exposure to the ambient atmosphere causes an increase in the threshold voltage strongly dependent on the used semiconducting ink formulation.

KW - Ageing

KW - All-inkjet printed devices

KW - Operational stability

KW - Organic electronics

UR - http://www.scopus.com/inward/record.url?scp=84938986182&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84938986182&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2015.05.006

DO - 10.1016/j.microrel.2015.05.006

M3 - Article

AN - SCOPUS:84938986182

SN - 0026-2714

VL - 55

SP - 1192

EP - 1195

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 8

M1 - 11536

ER -

All-inkjet printed organic transistors: Dielectric surface passivation techniques for improved operational stability and lifetime

Abstract

All Science Journal Classification (ASJC) codes

Keywords

Access to Document

Other files and links

Fingerprint

Cite this