@inproceedings{46d7706bf44e46ab8d05e71349331c97,
title = "AlGaN/GaN HEMTs grown by MBE on semi-insulating HVPE GaN templates",
abstract = "Summary form only given. Attempts to circumvent the low thermal conductivity of sapphire substrates by including in a device structure a thick (15 μm) GaN buffer grown by HVPE between the sapphire substrate and the MBE device layer stack. The heat generated in the device close to the surface of the structure is spread laterally in the HVPE buffer, increasing the effective thermal area of the device, and lowering the thermal impedance of the HEMT device. In contrast to SiC, the sapphire substrate technology is mature and affordable. Principally, both MBE and HVPE growth may be scaled up in area to grow on readily available large diameter sapphire substrates.",
keywords = "Aluminum gallium nitride, Gallium nitride, HEMTs, MODFETs",
author = "Weimann, {N. G.} and Manfra, {M. J.} and Hsu, {J. W.P.} and Pfeiffer, {L. N.} and West, {K. W.} and Lang, {D. V.} and Molnar, {R. J.}",
note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; 60th Device Research Conference, DRC 2002 ; Conference date: 24-06-2002 Through 26-06-2002",
year = "2002",
doi = "10.1109/DRC.2002.1029493",
language = "English (US)",
series = "Device Research Conference - Conference Digest, DRC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "33",
booktitle = "60th Device Research Conference, DRC 2002",
address = "United States",
}