Air-stable solution-processed hybrid transistors with hole and electron mobilities exceeding 2 cm2v-1 s-1

Jeremy Smith; Aneeqa Bashir; George Adamopoulos; John E. Anthony; Donal D.C. Bradley; R. Hamilton; Martin Heeney; Iain McCulloch; Thomas D. Anthopoulos

doi:10.1002/adma.201000195

Air-stable solution-processed hybrid transistors with hole and electron mobilities exceeding 2 cm²v^-1 s^-1

Jeremy Smith, Aneeqa Bashir, George Adamopoulos, John E. Anthony, Donal D.C. Bradley, R. Hamilton, Martin Heeney, Iain McCulloch, Thomas D. Anthopoulos

Research output: Contribution to journal › Article › peer-review

64 Scopus citations

Abstract

Figure Presented An alternative approach for the development of high-performance unipolar and ambipolar thin-film transistors and integrated circuits based on hybrid heterostructures comprising a phase-separated solution processed p-type organic small-molecule:polymer semicondcutor blend and a spray-coated n-type ZnO semiconductor layer is demonstrated.

Original language	English (US)
Pages (from-to)	3598-3602
Number of pages	5
Journal	Advanced Materials
Volume	22
Issue number	32
DOIs	https://doi.org/10.1002/adma.201000195
State	Published - Aug 24 2010
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201000195

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@article{27f0d5a323884d899126b1c68366d64d,

title = "Air-stable solution-processed hybrid transistors with hole and electron mobilities exceeding 2 cm2v-1 s-1",

abstract = "Figure Presented An alternative approach for the development of high-performance unipolar and ambipolar thin-film transistors and integrated circuits based on hybrid heterostructures comprising a phase-separated solution processed p-type organic small-molecule:polymer semicondcutor blend and a spray-coated n-type ZnO semiconductor layer is demonstrated.",

author = "Jeremy Smith and Aneeqa Bashir and George Adamopoulos and Anthony, \{John E.\} and Bradley, \{Donal D.C.\} and R. Hamilton and Martin Heeney and Iain McCulloch and Anthopoulos, \{Thomas D.\}",

year = "2010",

month = aug,

day = "24",

doi = "10.1002/adma.201000195",

language = "English (US)",

volume = "22",

pages = "3598--3602",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "32",

}

TY - JOUR

T1 - Air-stable solution-processed hybrid transistors with hole and electron mobilities exceeding 2 cm2v-1 s-1

AU - Smith, Jeremy

AU - Bashir, Aneeqa

AU - Adamopoulos, George

AU - Anthony, John E.

AU - Bradley, Donal D.C.

AU - Hamilton, R.

AU - Heeney, Martin

AU - McCulloch, Iain

AU - Anthopoulos, Thomas D.

PY - 2010/8/24

Y1 - 2010/8/24

N2 - Figure Presented An alternative approach for the development of high-performance unipolar and ambipolar thin-film transistors and integrated circuits based on hybrid heterostructures comprising a phase-separated solution processed p-type organic small-molecule:polymer semicondcutor blend and a spray-coated n-type ZnO semiconductor layer is demonstrated.

AB - Figure Presented An alternative approach for the development of high-performance unipolar and ambipolar thin-film transistors and integrated circuits based on hybrid heterostructures comprising a phase-separated solution processed p-type organic small-molecule:polymer semicondcutor blend and a spray-coated n-type ZnO semiconductor layer is demonstrated.

UR - https://www.scopus.com/pages/publications/77955766753

UR - https://www.scopus.com/inward/citedby.url?scp=77955766753&partnerID=8YFLogxK

U2 - 10.1002/adma.201000195

DO - 10.1002/adma.201000195

M3 - Article

C2 - 20665561

AN - SCOPUS:77955766753

SN - 0935-9648

VL - 22

SP - 3598

EP - 3602

JO - Advanced Materials

JF - Advanced Materials

IS - 32

ER -

Air-stable solution-processed hybrid transistors with hole and electron mobilities exceeding 2 cm²v^-1 s^-1

Abstract

All Science Journal Classification (ASJC) codes

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