AFM local oxidation nanopatterning of a high mobility shallow 2D hole gas

L. P. Rokhinson; D. C. Tsui; L. N. Pfeiffer; K. W. West

doi:10.1016/S0749-6036(02)00120-9

AFM local oxidation nanopatterning of a high mobility shallow 2D hole gas

L. P. Rokhinson, D. C. Tsui, L. N. Pfeiffer, K. W. West

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

The recently developed AFM local anodic oxidation (LAO) technique offers a convenient way of patterning nanodevices, but imposes even more stringent requirements on the underlying quantum well structure. We developed a new very shallow quantum well design which allows the depth and density of the 2D gas to be independently controlled during the growth. A high mobility (0.5 × 10⁶ cm² V^-1 s^-1 at 4.2 K) 2D hole gas just 350 Å below the surface is demonstrated. A quantum point contact, fabricated by AFM LAO nanopatterning from this wafer, shows nine quantum steps at 50 mK.

Original language	English (US)
Pages (from-to)	99-102
Number of pages	4
Journal	Superlattices and Microstructures
Volume	32
Issue number	2-3
DOIs	https://doi.org/10.1016/S0749-6036(02)00120-9
State	Published - 2002
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

Keywords

AFM lithography
GaAs/AlGaAs shallow hole gas
Quantum point contact

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10.1016/S0749-6036(02)00120-9

Cite this

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title = "AFM local oxidation nanopatterning of a high mobility shallow 2D hole gas",

abstract = "The recently developed AFM local anodic oxidation (LAO) technique offers a convenient way of patterning nanodevices, but imposes even more stringent requirements on the underlying quantum well structure. We developed a new very shallow quantum well design which allows the depth and density of the 2D gas to be independently controlled during the growth. A high mobility (0.5 × 106 cm2 V-1 s-1 at 4.2 K) 2D hole gas just 350 {\AA} below the surface is demonstrated. A quantum point contact, fabricated by AFM LAO nanopatterning from this wafer, shows nine quantum steps at 50 mK.",

keywords = "AFM lithography, GaAs/AlGaAs shallow hole gas, Quantum point contact",

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year = "2002",

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T1 - AFM local oxidation nanopatterning of a high mobility shallow 2D hole gas

AU - Rokhinson, L. P.

AU - Tsui, D. C.

AU - Pfeiffer, L. N.

AU - West, K. W.

PY - 2002

Y1 - 2002

N2 - The recently developed AFM local anodic oxidation (LAO) technique offers a convenient way of patterning nanodevices, but imposes even more stringent requirements on the underlying quantum well structure. We developed a new very shallow quantum well design which allows the depth and density of the 2D gas to be independently controlled during the growth. A high mobility (0.5 × 106 cm2 V-1 s-1 at 4.2 K) 2D hole gas just 350 Å below the surface is demonstrated. A quantum point contact, fabricated by AFM LAO nanopatterning from this wafer, shows nine quantum steps at 50 mK.

AB - The recently developed AFM local anodic oxidation (LAO) technique offers a convenient way of patterning nanodevices, but imposes even more stringent requirements on the underlying quantum well structure. We developed a new very shallow quantum well design which allows the depth and density of the 2D gas to be independently controlled during the growth. A high mobility (0.5 × 106 cm2 V-1 s-1 at 4.2 K) 2D hole gas just 350 Å below the surface is demonstrated. A quantum point contact, fabricated by AFM LAO nanopatterning from this wafer, shows nine quantum steps at 50 mK.

KW - AFM lithography

KW - GaAs/AlGaAs shallow hole gas

KW - Quantum point contact

UR - https://www.scopus.com/pages/publications/7244236462

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DO - 10.1016/S0749-6036(02)00120-9

M3 - Article

AN - SCOPUS:7244236462

SN - 0749-6036

VL - 32

SP - 99

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JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 2-3

ER -

AFM local oxidation nanopatterning of a high mobility shallow 2D hole gas

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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