Abstract
The Al/GaP(110) interface, formed by evaporating Al on a clean, well-ordered, sputter-annealed GaP(110) surface was studied with ELEED and AES. Evidence for island formation, when Al is evaporated on the room-temperature substrate, comes from the slow decrease of the Ga and P AES peaks and the persistence of the substrate ELEED pattern for up to 75 ML (monolawyer) of Al. Limited substrate decomposition was also observed for higher rates of Al evaporation. Upon annealing at moderate temperature, Al undergoes a metal-cation replacement reaction whereby Al-P bonds are formed and metallic Ga appears at the surface of the system. With an initial Al coverage of more than 8 Ml and a 690 degree C annealing cycle, a few layers of AlP are formed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 588-591 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 1 |
| Issue number | 2 pt 1 |
| DOIs | |
| State | Published - 1982 |
| Event | Proc of the Natl Symp of the AVS, 29th - Baltimore, Md, USA Duration: Nov 16 1982 → Nov 19 1982 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films