C. R. Bonapace, Antoine Kahn

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5 Scopus citations


The Al/GaP(110) interface, formed by evaporating Al on a clean, well-ordered, sputter-annealed GaP(110) surface was studied with ELEED and AES. Evidence for island formation, when Al is evaporated on the room-temperature substrate, comes from the slow decrease of the Ga and P AES peaks and the persistence of the substrate ELEED pattern for up to 75 ML (monolawyer) of Al. Limited substrate decomposition was also observed for higher rates of Al evaporation. Upon annealing at moderate temperature, Al undergoes a metal-cation replacement reaction whereby Al-P bonds are formed and metallic Ga appears at the surface of the system. With an initial Al coverage of more than 8 Ml and a 690 degree C annealing cycle, a few layers of AlP are formed.

Original languageEnglish (US)
Pages (from-to)588-591
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number2 pt 1
StatePublished - 1982
EventProc of the Natl Symp of the AVS, 29th - Baltimore, Md, USA
Duration: Nov 16 1982Nov 19 1982

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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