Advanced surface modification of indium tin oxide for improved charge injection in organic devices

Eric L. Hanson, Jing Guo, Norbert Koch, Jeffrey Schwartz, Steven L. Bernasek

Research output: Contribution to journalArticle

160 Scopus citations

Abstract

A new method is described for surface modification of ITO with an electroactive organic monolayer. This procedure was done to enhance hole injection in an electronic device and involves sequential formation of a monolayer of a π-conjugated organic semiconductor on the indium tin oxide (ITO) surface followed by doping with a strong electron acceptor. The semiconductor monolayer is covalently bound to the ITO, which ensures strong adhesion and interface stability; reduction of the hole injection barrier in these devices is accomplished by formation of a charge-transfer complex by doping within the monolayer. This gives rise to very high current densities in simple single layer devices and double layer light emitting device compared to those with untreated ITO anodes.

Original languageEnglish (US)
Pages (from-to)10058-10062
Number of pages5
JournalJournal of the American Chemical Society
Volume127
Issue number28
DOIs
StatePublished - Jul 20 2005

All Science Journal Classification (ASJC) codes

  • Catalysis
  • Chemistry(all)
  • Biochemistry
  • Colloid and Surface Chemistry

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