Advanced composite high-κ gate stack for mixed anion arsenide-antimonide quantum well transistors

A. Ali; H. Madan; R. Misra; E. Hwang; A. Agrawal; I. Ramirez; P. Schiffer; T. N. Jackson; S. E. Mohney; J. B. Boos; B. R. Bennett; I. Geppert; M. Eizenberg; S. Datta

doi:10.1109/IEDM.2010.5703308

Advanced composite high-κ gate stack for mixed anion arsenide-antimonide quantum well transistors

A. Ali, H. Madan, R. Misra, E. Hwang, A. Agrawal, I. Ramirez, P. Schiffer, T. N. Jackson, S. E. Mohney, J. B. Boos, B. R. Bennett, I. Geppert, M. Eizenberg, S. Datta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

9 Scopus citations

Abstract

This paper demonstrates the integration of a composite high-κ gate stack (3.3 nm Al₂O₃-1.0 nm GaSb) with a mixed anion InAs_0.8Sb_0.2 quantum-well field effect transistor (QWFET). The composite gate stack achieves; (i) EOT of 4.2 nm with <10 ^-7A/cm² gate leakage (ii) low D_it interface (∼1x10¹² /cm²/eV) (iii) high drift μ of 3,900-5,060 cm²/V-s at NS of 5×10¹¹-3×10 ¹²/cm². The InAs_0.8Sb_0.2 MOS-QWFETs with composite gate stack exhibit extrinsic (intrinsic) g_m of 334 (502) μS/μm and drive current of 380 μA/μm at V_DS = 0.5V for Lg=1μm.

Original language	English (US)
Title of host publication	2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages	6.3.1-6.3.4
DOIs	https://doi.org/10.1109/IEDM.2010.5703308
State	Published - 2010
Externally published	Yes
Event	2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States Duration: Dec 6 2010 → Dec 8 2010

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2010 IEEE International Electron Devices Meeting, IEDM 2010
Country/Territory	United States
City	San Francisco, CA
Period	12/6/10 → 12/8/10

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2010.5703308

Cite this

Ali, A., Madan, H., Misra, R., Hwang, E., Agrawal, A., Ramirez, I., Schiffer, P., Jackson, T. N., Mohney, S. E., Boos, J. B., Bennett, B. R., Geppert, I., Eizenberg, M., & Datta, S. (2010). Advanced composite high-κ gate stack for mixed anion arsenide-antimonide quantum well transistors. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 (pp. 6.3.1-6.3.4). Article 5703308 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703308

@inproceedings{ef148eb44069420db1cad758a7b1be73,

title = "Advanced composite high-κ gate stack for mixed anion arsenide-antimonide quantum well transistors",

abstract = "This paper demonstrates the integration of a composite high-κ gate stack (3.3 nm Al2O3-1.0 nm GaSb) with a mixed anion InAs0.8Sb0.2 quantum-well field effect transistor (QWFET). The composite gate stack achieves; (i) EOT of 4.2 nm with <10 -7A/cm2 gate leakage (ii) low Dit interface (∼1x1012 /cm2/eV) (iii) high drift μ of 3,900-5,060 cm2/V-s at NS of 5×1011-3×10 12/cm2. The InAs0.8Sb0.2 MOS-QWFETs with composite gate stack exhibit extrinsic (intrinsic) gm of 334 (502) μS/μm and drive current of 380 μA/μm at VDS = 0.5V for Lg=1μm.",

author = "A. Ali and H. Madan and R. Misra and E. Hwang and A. Agrawal and I. Ramirez and P. Schiffer and Jackson, {T. N.} and Mohney, {S. E.} and Boos, {J. B.} and Bennett, {B. R.} and I. Geppert and M. Eizenberg and S. Datta",

year = "2010",

doi = "10.1109/IEDM.2010.5703308",

language = "English (US)",

isbn = "9781424474196",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "6.3.1--6.3.4",

booktitle = "2010 IEEE International Electron Devices Meeting, IEDM 2010",

note = "2010 IEEE International Electron Devices Meeting, IEDM 2010 ; Conference date: 06-12-2010 Through 08-12-2010",

}

Ali, A, Madan, H, Misra, R, Hwang, E, Agrawal, A, Ramirez, I, Schiffer, P, Jackson, TN, Mohney, SE, Boos, JB, Bennett, BR, Geppert, I, Eizenberg, M & Datta, S 2010, Advanced composite high-κ gate stack for mixed anion arsenide-antimonide quantum well transistors. in 2010 IEEE International Electron Devices Meeting, IEDM 2010., 5703308, Technical Digest - International Electron Devices Meeting, IEDM, pp. 6.3.1-6.3.4, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 12/6/10. https://doi.org/10.1109/IEDM.2010.5703308

Advanced composite high-κ gate stack for mixed anion arsenide-antimonide quantum well transistors. / Ali, A.; Madan, H.; Misra, R. et al.
2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. p. 6.3.1-6.3.4 5703308 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Advanced composite high-κ gate stack for mixed anion arsenide-antimonide quantum well transistors

AU - Ali, A.

AU - Madan, H.

AU - Misra, R.

AU - Hwang, E.

AU - Agrawal, A.

AU - Ramirez, I.

AU - Schiffer, P.

AU - Jackson, T. N.

AU - Mohney, S. E.

AU - Boos, J. B.

AU - Bennett, B. R.

AU - Geppert, I.

AU - Eizenberg, M.

AU - Datta, S.

PY - 2010

Y1 - 2010

N2 - This paper demonstrates the integration of a composite high-κ gate stack (3.3 nm Al2O3-1.0 nm GaSb) with a mixed anion InAs0.8Sb0.2 quantum-well field effect transistor (QWFET). The composite gate stack achieves; (i) EOT of 4.2 nm with <10 -7A/cm2 gate leakage (ii) low Dit interface (∼1x1012 /cm2/eV) (iii) high drift μ of 3,900-5,060 cm2/V-s at NS of 5×1011-3×10 12/cm2. The InAs0.8Sb0.2 MOS-QWFETs with composite gate stack exhibit extrinsic (intrinsic) gm of 334 (502) μS/μm and drive current of 380 μA/μm at VDS = 0.5V for Lg=1μm.

AB - This paper demonstrates the integration of a composite high-κ gate stack (3.3 nm Al2O3-1.0 nm GaSb) with a mixed anion InAs0.8Sb0.2 quantum-well field effect transistor (QWFET). The composite gate stack achieves; (i) EOT of 4.2 nm with <10 -7A/cm2 gate leakage (ii) low Dit interface (∼1x1012 /cm2/eV) (iii) high drift μ of 3,900-5,060 cm2/V-s at NS of 5×1011-3×10 12/cm2. The InAs0.8Sb0.2 MOS-QWFETs with composite gate stack exhibit extrinsic (intrinsic) gm of 334 (502) μS/μm and drive current of 380 μA/μm at VDS = 0.5V for Lg=1μm.

UR - http://www.scopus.com/inward/record.url?scp=79951831255&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79951831255&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2010.5703308

DO - 10.1109/IEDM.2010.5703308

M3 - Conference contribution

AN - SCOPUS:79951831255

SN - 9781424474196

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 6.3.1-6.3.4

BT - 2010 IEEE International Electron Devices Meeting, IEDM 2010

T2 - 2010 IEEE International Electron Devices Meeting, IEDM 2010

Y2 - 6 December 2010 through 8 December 2010

ER -

Advanced composite high-κ gate stack for mixed anion arsenide-antimonide quantum well transistors

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