Adsorption geometry and overlayer morphology in the formation of interfaces between metals and (110) lll-V surfaces

K. Stevens, L. Soonckindt, Antoine Kahn

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

Interfaces formed between metals (In, Ag) and cleaved (110) surfaces of III-V compound semiconductors (GaSb, GaAs) held at low temperature are studied with low-energy electron diffraction and electron energy-loss spectroscopy. We consider the unrelaxation of the semiconductor surface structure by the metal adatoms, the adsorption sites on the surface and their implications for semiconductor band bending. The results are discussed in light of recent scanning tunneling microscopy measurements on metal/semiconductor interfaces and tight binding calculations of preferential adsorption sites.

Original languageEnglish (US)
Pages (from-to)2068-2073
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume8
Issue number3
DOIs
StatePublished - Jan 1 1990

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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