Abstract
Interfaces formed between metals (In, Ag) and cleaved (110) surfaces of III-V compound semiconductors (GaSb, GaAs) held at low temperature are studied with low-energy electron diffraction and electron energy-loss spectroscopy. We consider the unrelaxation of the semiconductor surface structure by the metal adatoms, the adsorption sites on the surface and their implications for semiconductor band bending. The results are discussed in light of recent scanning tunneling microscopy measurements on metal/semiconductor interfaces and tight binding calculations of preferential adsorption sites.
Original language | English (US) |
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Pages (from-to) | 2068-2073 |
Number of pages | 6 |
Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
Volume | 8 |
Issue number | 3 |
DOIs | |
State | Published - May 1990 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films