Adsorption-controlled molecular-beam epitaxial growth of BiFe O3

J. F. Ihlefeld; A. Kumar; V. Gopalan; D. G. Schlom; Y. B. Chen; X. Q. Pan; T. Heeg; J. Schubert; X. Ke; P. Schiffer; J. Orenstein; L. W. Martin; Y. H. Chu; R. Ramesh

doi:10.1063/1.2767771

Adsorption-controlled molecular-beam epitaxial growth of BiFe O3

J. F. Ihlefeld, A. Kumar, V. Gopalan, D. G. Schlom, Y. B. Chen, X. Q. Pan, T. Heeg, J. Schubert, X. Ke, P. Schiffer, J. Orenstein, L. W. Martin, Y. H. Chu, R. Ramesh

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93 Scopus citations

Abstract

BiFe O3 thin films have been deposited on (111) SrTi O3 single crystal substrates by reactive molecular-beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth overpressure and utilizing the differential vapor pressures between bismuth oxides and BiFe O3 to control stoichiometry. Four-circle x-ray diffraction reveals phase-pure, untwinned, epitaxial, (0001)-oriented films with rocking curve full width at half maximum values as narrow as 25 arc sec (0.007°). Second harmonic generation polar plots combined with diffraction establish the crystallographic point group of these untwinned epitaxial films to be 3m at room temperature.

Original language	English (US)
Article number	071922
Journal	Applied Physics Letters
Volume	91
Issue number	7
DOIs	https://doi.org/10.1063/1.2767771
State	Published - 2007
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2767771

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@article{3a85737c3ba24abd8a01fa14955debe6,

title = "Adsorption-controlled molecular-beam epitaxial growth of BiFe O3",

abstract = "BiFe O3 thin films have been deposited on (111) SrTi O3 single crystal substrates by reactive molecular-beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth overpressure and utilizing the differential vapor pressures between bismuth oxides and BiFe O3 to control stoichiometry. Four-circle x-ray diffraction reveals phase-pure, untwinned, epitaxial, (0001)-oriented films with rocking curve full width at half maximum values as narrow as 25 arc sec (0.007°). Second harmonic generation polar plots combined with diffraction establish the crystallographic point group of these untwinned epitaxial films to be 3m at room temperature.",

author = "Ihlefeld, {J. F.} and A. Kumar and V. Gopalan and Schlom, {D. G.} and Chen, {Y. B.} and Pan, {X. Q.} and T. Heeg and J. Schubert and X. Ke and P. Schiffer and J. Orenstein and Martin, {L. W.} and Chu, {Y. H.} and R. Ramesh",

note = "Funding Information: This work was supported by the Office of Naval Research through Grant No. N00014-04-1-0426 monitored by Colin Wood, and by the NSF through Grant Nos. DMR-0213623, DMR-0122638, DMR-0507146, DMR-0512165, and DMR-0349632.",

year = "2007",

doi = "10.1063/1.2767771",

language = "English (US)",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - Adsorption-controlled molecular-beam epitaxial growth of BiFe O3

AU - Ihlefeld, J. F.

AU - Kumar, A.

AU - Gopalan, V.

AU - Schlom, D. G.

AU - Chen, Y. B.

AU - Pan, X. Q.

AU - Heeg, T.

AU - Schubert, J.

AU - Ke, X.

AU - Schiffer, P.

AU - Orenstein, J.

AU - Martin, L. W.

AU - Chu, Y. H.

AU - Ramesh, R.

N1 - Funding Information: This work was supported by the Office of Naval Research through Grant No. N00014-04-1-0426 monitored by Colin Wood, and by the NSF through Grant Nos. DMR-0213623, DMR-0122638, DMR-0507146, DMR-0512165, and DMR-0349632.

PY - 2007

Y1 - 2007

N2 - BiFe O3 thin films have been deposited on (111) SrTi O3 single crystal substrates by reactive molecular-beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth overpressure and utilizing the differential vapor pressures between bismuth oxides and BiFe O3 to control stoichiometry. Four-circle x-ray diffraction reveals phase-pure, untwinned, epitaxial, (0001)-oriented films with rocking curve full width at half maximum values as narrow as 25 arc sec (0.007°). Second harmonic generation polar plots combined with diffraction establish the crystallographic point group of these untwinned epitaxial films to be 3m at room temperature.

AB - BiFe O3 thin films have been deposited on (111) SrTi O3 single crystal substrates by reactive molecular-beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth overpressure and utilizing the differential vapor pressures between bismuth oxides and BiFe O3 to control stoichiometry. Four-circle x-ray diffraction reveals phase-pure, untwinned, epitaxial, (0001)-oriented films with rocking curve full width at half maximum values as narrow as 25 arc sec (0.007°). Second harmonic generation polar plots combined with diffraction establish the crystallographic point group of these untwinned epitaxial films to be 3m at room temperature.

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DO - 10.1063/1.2767771

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 071922

ER -

Adsorption-controlled molecular-beam epitaxial growth of BiFe O3

Abstract

All Science Journal Classification (ASJC) codes

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