Adsorption-controlled growth of BiMnO3 films by molecular-beam epitaxy

J. H. Lee; X. Ke; R. Misra; J. F. Ihlefeld; X. S. Xu; Z. G. Mei; T. Heeg; M. Roeckerath; J. Schubert; Z. K. Liu; J. L. Musfeldt; P. Schiffer; D. G. Schlom

doi:10.1063/1.3457786

Adsorption-controlled growth of BiMnO₃ films by molecular-beam epitaxy

J. H. Lee
, X. Ke
, R. Misra
, J. F. Ihlefeld
, X. S. Xu
, Z. G. Mei
, T. Heeg
, M. Roeckerath
, J. Schubert
, Z. K. Liu
, J. L. Musfeldt
, P. Schiffer
, D. G. Schlom

Research output: Contribution to journal › Article › peer-review

51 Scopus citations

Abstract

We have developed the means to grow BiMnO₃ thin films with unparalleled structural perfection by reactive molecular-beam epitaxy and determined its band gap. Film growth occurs in an adsorption-controlled growth regime. Within this growth window bounded by oxygen pressure and substrate temperature at a fixed bismuth overpressure, single-phase films of the metastable perovskite BiMnO₃ may be grown by epitaxial stabilization. X-ray diffraction reveals phase-pure and epitaxial films with ω rocking curve full width at half maximum values as narrow as 11 arc sec (0.003°). Optical absorption measurements reveal that BiMnO₃ has a direct band gap of 1.1±0.1 eV.

Original language	English (US)
Article number	262905
Journal	Applied Physics Letters
Volume	96
Issue number	26
DOIs	https://doi.org/10.1063/1.3457786
State	Published - Jun 28 2010
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3457786

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@article{f8ddc21ebbce4d13a99fb8954b64f719,

title = "Adsorption-controlled growth of BiMnO3 films by molecular-beam epitaxy",

abstract = "We have developed the means to grow BiMnO3 thin films with unparalleled structural perfection by reactive molecular-beam epitaxy and determined its band gap. Film growth occurs in an adsorption-controlled growth regime. Within this growth window bounded by oxygen pressure and substrate temperature at a fixed bismuth overpressure, single-phase films of the metastable perovskite BiMnO3 may be grown by epitaxial stabilization. X-ray diffraction reveals phase-pure and epitaxial films with ω rocking curve full width at half maximum values as narrow as 11 arc sec (0.003°). Optical absorption measurements reveal that BiMnO3 has a direct band gap of 1.1±0.1 eV.",

author = "Lee, \{J. H.\} and X. Ke and R. Misra and Ihlefeld, \{J. F.\} and Xu, \{X. S.\} and Mei, \{Z. G.\} and T. Heeg and M. Roeckerath and J. Schubert and Liu, \{Z. K.\} and Musfeldt, \{J. L.\} and P. Schiffer and Schlom, \{D. G.\}",

note = "Funding Information: We gratefully acknowledge the financial support from the National Science Foundation through Grant No. DMR-0507146 and the MRSEC program (Grant No. DMR-0820404) and from the U.S. DOE through Grant No. DE-FG02-01-ER45885(UT).",

year = "2010",

month = jun,

day = "28",

doi = "10.1063/1.3457786",

language = "English (US)",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "26",

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TY - JOUR

T1 - Adsorption-controlled growth of BiMnO3 films by molecular-beam epitaxy

AU - Lee, J. H.

AU - Ke, X.

AU - Misra, R.

AU - Ihlefeld, J. F.

AU - Xu, X. S.

AU - Mei, Z. G.

AU - Heeg, T.

AU - Roeckerath, M.

AU - Schubert, J.

AU - Liu, Z. K.

AU - Musfeldt, J. L.

AU - Schiffer, P.

AU - Schlom, D. G.

N1 - Funding Information: We gratefully acknowledge the financial support from the National Science Foundation through Grant No. DMR-0507146 and the MRSEC program (Grant No. DMR-0820404) and from the U.S. DOE through Grant No. DE-FG02-01-ER45885(UT).

PY - 2010/6/28

Y1 - 2010/6/28

N2 - We have developed the means to grow BiMnO3 thin films with unparalleled structural perfection by reactive molecular-beam epitaxy and determined its band gap. Film growth occurs in an adsorption-controlled growth regime. Within this growth window bounded by oxygen pressure and substrate temperature at a fixed bismuth overpressure, single-phase films of the metastable perovskite BiMnO3 may be grown by epitaxial stabilization. X-ray diffraction reveals phase-pure and epitaxial films with ω rocking curve full width at half maximum values as narrow as 11 arc sec (0.003°). Optical absorption measurements reveal that BiMnO3 has a direct band gap of 1.1±0.1 eV.

AB - We have developed the means to grow BiMnO3 thin films with unparalleled structural perfection by reactive molecular-beam epitaxy and determined its band gap. Film growth occurs in an adsorption-controlled growth regime. Within this growth window bounded by oxygen pressure and substrate temperature at a fixed bismuth overpressure, single-phase films of the metastable perovskite BiMnO3 may be grown by epitaxial stabilization. X-ray diffraction reveals phase-pure and epitaxial films with ω rocking curve full width at half maximum values as narrow as 11 arc sec (0.003°). Optical absorption measurements reveal that BiMnO3 has a direct band gap of 1.1±0.1 eV.

UR - https://www.scopus.com/pages/publications/77954347930

UR - https://www.scopus.com/pages/publications/77954347930#tab=citedBy

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DO - 10.1063/1.3457786

M3 - Article

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SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 262905

ER -

Adsorption-controlled growth of BiMnO₃ films by molecular-beam epitaxy

Abstract

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