Adsorption-controlled growth of BiMnO3 films by molecular-beam epitaxy

J. H. Lee; X. Ke; R. Misra; J. F. Ihlefeld; X. S. Xu; Z. G. Mei; T. Heeg; M. Roeckerath; J. Schubert; Z. K. Liu; J. L. Musfeldt; P. Schiffer; D. G. Schlom

doi:10.1063/1.3457786

Adsorption-controlled growth of BiMnO₃ films by molecular-beam epitaxy

J. H. Lee, X. Ke, R. Misra, J. F. Ihlefeld, X. S. Xu, Z. G. Mei, T. Heeg, M. Roeckerath, J. Schubert, Z. K. Liu, J. L. Musfeldt, P. Schiffer, D. G. Schlom

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48 Scopus citations

Abstract

We have developed the means to grow BiMnO₃ thin films with unparalleled structural perfection by reactive molecular-beam epitaxy and determined its band gap. Film growth occurs in an adsorption-controlled growth regime. Within this growth window bounded by oxygen pressure and substrate temperature at a fixed bismuth overpressure, single-phase films of the metastable perovskite BiMnO₃ may be grown by epitaxial stabilization. X-ray diffraction reveals phase-pure and epitaxial films with ω rocking curve full width at half maximum values as narrow as 11 arc sec (0.003°). Optical absorption measurements reveal that BiMnO₃ has a direct band gap of 1.1±0.1 eV.

Original language	English (US)
Article number	262905
Journal	Applied Physics Letters
Volume	96
Issue number	26
DOIs	https://doi.org/10.1063/1.3457786
State	Published - Jun 28 2010
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3457786

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title = "Adsorption-controlled growth of BiMnO3 films by molecular-beam epitaxy",

abstract = "We have developed the means to grow BiMnO3 thin films with unparalleled structural perfection by reactive molecular-beam epitaxy and determined its band gap. Film growth occurs in an adsorption-controlled growth regime. Within this growth window bounded by oxygen pressure and substrate temperature at a fixed bismuth overpressure, single-phase films of the metastable perovskite BiMnO3 may be grown by epitaxial stabilization. X-ray diffraction reveals phase-pure and epitaxial films with ω rocking curve full width at half maximum values as narrow as 11 arc sec (0.003°). Optical absorption measurements reveal that BiMnO3 has a direct band gap of 1.1±0.1 eV.",

author = "Lee, {J. H.} and X. Ke and R. Misra and Ihlefeld, {J. F.} and Xu, {X. S.} and Mei, {Z. G.} and T. Heeg and M. Roeckerath and J. Schubert and Liu, {Z. K.} and Musfeldt, {J. L.} and P. Schiffer and Schlom, {D. G.}",

note = "Funding Information: We gratefully acknowledge the financial support from the National Science Foundation through Grant No. DMR-0507146 and the MRSEC program (Grant No. DMR-0820404) and from the U.S. DOE through Grant No. DE-FG02-01-ER45885(UT).",

year = "2010",

month = jun,

day = "28",

doi = "10.1063/1.3457786",

language = "English (US)",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

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T1 - Adsorption-controlled growth of BiMnO3 films by molecular-beam epitaxy

AU - Lee, J. H.

AU - Ke, X.

AU - Misra, R.

AU - Ihlefeld, J. F.

AU - Xu, X. S.

AU - Mei, Z. G.

AU - Heeg, T.

AU - Roeckerath, M.

AU - Schubert, J.

AU - Liu, Z. K.

AU - Musfeldt, J. L.

AU - Schiffer, P.

AU - Schlom, D. G.

N1 - Funding Information: We gratefully acknowledge the financial support from the National Science Foundation through Grant No. DMR-0507146 and the MRSEC program (Grant No. DMR-0820404) and from the U.S. DOE through Grant No. DE-FG02-01-ER45885(UT).

PY - 2010/6/28

Y1 - 2010/6/28

N2 - We have developed the means to grow BiMnO3 thin films with unparalleled structural perfection by reactive molecular-beam epitaxy and determined its band gap. Film growth occurs in an adsorption-controlled growth regime. Within this growth window bounded by oxygen pressure and substrate temperature at a fixed bismuth overpressure, single-phase films of the metastable perovskite BiMnO3 may be grown by epitaxial stabilization. X-ray diffraction reveals phase-pure and epitaxial films with ω rocking curve full width at half maximum values as narrow as 11 arc sec (0.003°). Optical absorption measurements reveal that BiMnO3 has a direct band gap of 1.1±0.1 eV.

AB - We have developed the means to grow BiMnO3 thin films with unparalleled structural perfection by reactive molecular-beam epitaxy and determined its band gap. Film growth occurs in an adsorption-controlled growth regime. Within this growth window bounded by oxygen pressure and substrate temperature at a fixed bismuth overpressure, single-phase films of the metastable perovskite BiMnO3 may be grown by epitaxial stabilization. X-ray diffraction reveals phase-pure and epitaxial films with ω rocking curve full width at half maximum values as narrow as 11 arc sec (0.003°). Optical absorption measurements reveal that BiMnO3 has a direct band gap of 1.1±0.1 eV.

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JF - Applied Physics Letters

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M1 - 262905

ER -

Adsorption-controlled growth of BiMnO₃ films by molecular-beam epitaxy

Abstract

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