TY - JOUR
T1 - Adsorption and diffusion of Ga and N adatoms on GaN surfaces
T2 - Comparing the effects of Ga coverage and electronic excitation
AU - Takeuchi, Noboru
AU - Selloni, Annabella
AU - Myers, T. H.
AU - Doolittle, A.
PY - 2005/9/15
Y1 - 2005/9/15
N2 - We present density-functional-theory calculations of the binding and diffusion of Ga and N adatoms on GaN (0001) and (000-1) surfaces under different conditions, including stoichiometric and Ga-rich surfaces, as well as in the presence of electron-hole (e-h) pairs induced by light- or electron-beam irradiation. We find that both Ga-rich conditions and electronic excitations cause a significant reduction of the adatom diffusion barriers, as required to improve the quality of the material. However, the two effects are nonadditive, as the influence of e-h pairs are found to be less important for the more metallic situations.
AB - We present density-functional-theory calculations of the binding and diffusion of Ga and N adatoms on GaN (0001) and (000-1) surfaces under different conditions, including stoichiometric and Ga-rich surfaces, as well as in the presence of electron-hole (e-h) pairs induced by light- or electron-beam irradiation. We find that both Ga-rich conditions and electronic excitations cause a significant reduction of the adatom diffusion barriers, as required to improve the quality of the material. However, the two effects are nonadditive, as the influence of e-h pairs are found to be less important for the more metallic situations.
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U2 - 10.1103/PhysRevB.72.115307
DO - 10.1103/PhysRevB.72.115307
M3 - Article
AN - SCOPUS:29744437985
SN - 1098-0121
VL - 72
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 11
M1 - 115307
ER -