Adatom diffusion and disordering at the Ge(111)-c(2×8)-(1×1) surface transition

Noboru Takeuchi, Annabella Selloni, E. Tosatti

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47 Scopus citations


We present an ab initio study of the diffusion of Ge adatoms and the disordering of Ge(111)-c(2×8) at ∼300°C. In the absence of adatom vacancies, we find that the most likely diffusion mechanism is an anisotropic correlated process in which several adatoms of a [11̄0] row hop concertedly along the same row. When surface vacancies are present, adatoms can instead hop one by one along [11̄0] in an uncorrelated way. Anisotropy arises from the special bonding topology of the c(2×8) structure. Calculated scanning tunneling microscopy images of the diffusion process show that adatom jumps are accompanied by an important electron backflow.

Original languageEnglish (US)
Pages (from-to)10757-10760
Number of pages4
JournalPhysical Review B
Issue number15
StatePublished - 1994

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics


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