Active-matrix amorphous-silicon TFTs arrays at 180 °C on clear plastic and glass substrates for organic light-emitting displays

K. Long; A. Z. Kattamis; I. C. Cheng; H. Gleskova; S. Wagner; J. C. Sturm; M. Stevenson; G. Yu; M. O'Regan

doi:10.1109/TED.2006.878028

Active-matrix amorphous-silicon TFTs arrays at 180 °C on clear plastic and glass substrates for organic light-emitting displays

K. Long, A. Z. Kattamis, I. C. Cheng, H. Gleskova, S. Wagner, J. C. Sturm, M. Stevenson, G. Yu, M. O'Regan

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

An amorphous-silicon thin-film transistor (TFT) process with a 180 °C maximum temperature using plasma-enhanced chemical vapor deposition has been developed on both novel clear polymer and glass substrates. The gate leakage current, threshold voltage, mobility, and on/off ratio of the TFTs are comparable with those of standard TFTs on glass with deposition temperature of 300 °C-350 °C. Active-matrix pixel circuits for organic light-emitting displays (LEDs) on both glass and clear plastic substrates were fabricated with these TFTs. Leakage current in the switching TFT is low enough to allow data storage for video graphics array timings. The pixels provide suitable drive current for bright displays at a modest drive voltage. Test active matrices with integrated polymer LEDs on glass showed good pixel uniformity, behaved electrically as expected for the TFT characteristics, and were as bright as 1500 cd/m².

Original language	English (US)
Pages (from-to)	1789-1796
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	53
Issue number	8
DOIs	https://doi.org/10.1109/TED.2006.878028
State	Published - Aug 2006

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

Active matrix
Amorphous-silicon
Flexible
Organic light-emitting display
Plastic substrate
Thin-film transitor (TFT)

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10.1109/TED.2006.878028

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title = "Active-matrix amorphous-silicon TFTs arrays at 180 °C on clear plastic and glass substrates for organic light-emitting displays",

abstract = "An amorphous-silicon thin-film transistor (TFT) process with a 180 °C maximum temperature using plasma-enhanced chemical vapor deposition has been developed on both novel clear polymer and glass substrates. The gate leakage current, threshold voltage, mobility, and on/off ratio of the TFTs are comparable with those of standard TFTs on glass with deposition temperature of 300 °C-350 °C. Active-matrix pixel circuits for organic light-emitting displays (LEDs) on both glass and clear plastic substrates were fabricated with these TFTs. Leakage current in the switching TFT is low enough to allow data storage for video graphics array timings. The pixels provide suitable drive current for bright displays at a modest drive voltage. Test active matrices with integrated polymer LEDs on glass showed good pixel uniformity, behaved electrically as expected for the TFT characteristics, and were as bright as 1500 cd/m2.",

keywords = "Active matrix, Amorphous-silicon, Flexible, Organic light-emitting display, Plastic substrate, Thin-film transitor (TFT)",

author = "K. Long and Kattamis, {A. Z.} and Cheng, {I. C.} and H. Gleskova and S. Wagner and Sturm, {J. C.} and M. Stevenson and G. Yu and M. O'Regan",

note = "Funding Information: Manuscript received December 20, 2005; revised April 21, 2006. This work was supported by DuPont Company, DARPA, and NJCST. The review of this paper was arranged by Editor H. S. Tae. K. Long, A. Z. Kattamis, I.-C. Cheng, H. Gleskova, S. Wagner, and J. C. Sturm are with the Department of Electrical Engineering, Princeton University, Princeton, NJ 08544 USA. M. Stevenson, G. Yu, and M. O{\textquoteright}Regan are with DuPont Displays, Santa Barbara, CA 93117 USA. Digital Object Identifier 10.1109/TED.2006.878028",

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AU - Long, K.

AU - Kattamis, A. Z.

AU - Cheng, I. C.

AU - Gleskova, H.

AU - Wagner, S.

AU - Sturm, J. C.

AU - Stevenson, M.

AU - Yu, G.

AU - O'Regan, M.

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N2 - An amorphous-silicon thin-film transistor (TFT) process with a 180 °C maximum temperature using plasma-enhanced chemical vapor deposition has been developed on both novel clear polymer and glass substrates. The gate leakage current, threshold voltage, mobility, and on/off ratio of the TFTs are comparable with those of standard TFTs on glass with deposition temperature of 300 °C-350 °C. Active-matrix pixel circuits for organic light-emitting displays (LEDs) on both glass and clear plastic substrates were fabricated with these TFTs. Leakage current in the switching TFT is low enough to allow data storage for video graphics array timings. The pixels provide suitable drive current for bright displays at a modest drive voltage. Test active matrices with integrated polymer LEDs on glass showed good pixel uniformity, behaved electrically as expected for the TFT characteristics, and were as bright as 1500 cd/m2.

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KW - Amorphous-silicon

KW - Flexible

KW - Organic light-emitting display

KW - Plastic substrate

KW - Thin-film transitor (TFT)

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Active-matrix amorphous-silicon TFTs arrays at 180 °C on clear plastic and glass substrates for organic light-emitting displays

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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