Achieving high mobilities in solution-processable organic FETs by minimizing contact effects

Behrang H. Hamadani; Iain McCulloch; Martin Heeney; David J. Gundlach

doi:10.1109/ISDRS.2007.4422498

Achieving high mobilities in solution-processable organic FETs by minimizing contact effects

Behrang H. Hamadani, Iain McCulloch, Martin Heeney, David J. Gundlach

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	2007 International Semiconductor Device Research Symposium, ISDRS
DOIs	https://doi.org/10.1109/ISDRS.2007.4422498
State	Published - 2007
Externally published	Yes
Event	2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States Duration: Dec 12 2007 → Dec 14 2007

Publication series

Name	2007 International Semiconductor Device Research Symposium, ISDRS

Conference

Conference	2007 International Semiconductor Device Research Symposium, ISDRS
Country/Territory	United States
City	College Park, MD
Period	12/12/07 → 12/14/07

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISDRS.2007.4422498

Cite this

@inproceedings{41ca562143d34ed7be2bbd1726b377bd,

title = "Achieving high mobilities in solution-processable organic FETs by minimizing contact effects",

author = "Hamadani, {Behrang H.} and Iain McCulloch and Martin Heeney and Gundlach, {David J.}",

year = "2007",

doi = "10.1109/ISDRS.2007.4422498",

language = "English (US)",

isbn = "1424418917",

series = "2007 International Semiconductor Device Research Symposium, ISDRS",

booktitle = "2007 International Semiconductor Device Research Symposium, ISDRS",

note = "2007 International Semiconductor Device Research Symposium, ISDRS ; Conference date: 12-12-2007 Through 14-12-2007",

}

Hamadani, BH, McCulloch, I, Heeney, M & Gundlach, DJ 2007, Achieving high mobilities in solution-processable organic FETs by minimizing contact effects. in 2007 International Semiconductor Device Research Symposium, ISDRS., 4422498, 2007 International Semiconductor Device Research Symposium, ISDRS, 2007 International Semiconductor Device Research Symposium, ISDRS, College Park, MD, United States, 12/12/07. https://doi.org/10.1109/ISDRS.2007.4422498

Achieving high mobilities in solution-processable organic FETs by minimizing contact effects. / Hamadani, Behrang H.; McCulloch, Iain; Heeney, Martin et al.
2007 International Semiconductor Device Research Symposium, ISDRS. 2007. 4422498 (2007 International Semiconductor Device Research Symposium, ISDRS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Achieving high mobilities in solution-processable organic FETs by minimizing contact effects

AU - Hamadani, Behrang H.

AU - McCulloch, Iain

AU - Heeney, Martin

AU - Gundlach, David J.

PY - 2007

Y1 - 2007

UR - http://www.scopus.com/inward/record.url?scp=44949194837&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=44949194837&partnerID=8YFLogxK

U2 - 10.1109/ISDRS.2007.4422498

DO - 10.1109/ISDRS.2007.4422498

M3 - Conference contribution

AN - SCOPUS:44949194837

SN - 1424418917

SN - 9781424418916

T3 - 2007 International Semiconductor Device Research Symposium, ISDRS

BT - 2007 International Semiconductor Device Research Symposium, ISDRS

T2 - 2007 International Semiconductor Device Research Symposium, ISDRS

Y2 - 12 December 2007 through 14 December 2007

ER -

Achieving high mobilities in solution-processable organic FETs by minimizing contact effects

Publication series

Conference

All Science Journal Classification (ASJC) codes

Access to Document

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