Keyphrases
2D Devices
25%
3D Devices
25%
Central Composite Rotatable Design
25%
Circuit Optimization
25%
Cost-effective Fabrication
25%
Delay Estimate
25%
Delay Estimation
100%
Delay Model
25%
Environmental Variability
25%
Gate Length
25%
Gate Oxide Thickness
25%
Independent Gate FinFET
25%
Leakage Characterization
25%
Leakage Delay
100%
Leakage Model
25%
Leakage Power
25%
Logic Styles
25%
Low Leakage Power
25%
Multigate Transistor
50%
PVT Variations
100%
Quasi-Monte Carlo Simulation
50%
Response Surface Methodology
100%
Root Mean Square Error
25%
Shorted Gate
25%
Supply Voltage
25%
TCAD Simulation
50%
Timing Characterization
25%
Tri-gate
25%
Engineering
Circuit Designer
33%
Delay Estimation
100%
Field Effect Transistor
33%
Fin Thickness
33%
Gate Length
33%
Gate Oxide
33%
Logic Gate
66%
Promising Candidate
33%
Response Surface Methodology
100%
Root Mean Square Error
33%
Supply Voltage
33%
Material Science
Electronic Circuit
100%
Field Effect Transistor
50%
Oxide Compound
50%
Transistor
100%