Accurate leakage/delay estimation for FinFET standard cells under PVT variations using the response surface methodology

Engineering & Materials Science

• FinFET 100%
• Analytical models 33%
• Logic gates 31%
• Transistors 22%
• Networks (circuits) 14%
• Leakage currents 13%
• Field effect transistors 13%
• Mean square error 12%
• Oxides 11%
• Program processors 11%
• Fabrication 9%
• Electric power utilization 9%
• Composite materials 7%
• Electric potential 6%
• Temperature 5%
• Costs 4%