Abstract
We measure the crossover from diffusive to ballistic transport as a function of frequency in dc contacted high-mobility two-dimensional electron gas structures in GaAs AlGaAs heterostructures at GHz frequencies. By systematically measuring samples of varying mobility we demonstrate that the crossover frequency scales with mobility as predicted by the Drude model. We find the ohmic contact impedance to be real and independent of frequency for samples with mobility higher than 500000cm2 Vs, while there is a significant capacitive component in parallel with the contact resistance for lower mobility samples.
Original language | English (US) |
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Article number | 165312 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 72 |
Issue number | 16 |
DOIs | |
State | Published - Oct 15 2005 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics