Absence of a Band Gap at the Interface of a Metal and Highly Doped Monolayer MoS₂

Keyphrases

• Band Gap 100%
• Highly Doped 100%
• Transition Metal Dichalcogenides 100%
• Monolayer MoS2 100%
• Metal-induced Gap States 100%
• Metal-doped 100%
• Electronic Properties 66%
• Electrical Contact 66%
• Molybdenite 66%
• Scanning Tunneling Microscopy 33%
• Heavily Doped 33%
• Graphite 33%
• Doped Semiconductor 33%
• Band Edge 33%
• Atomic Scale 33%
• Metal-semiconductor Contact 33%
• Underground Physics 33%
• Ultra-high Vacuum 33%
• Device Application 33%
• Universal Property 33%
• Local Density of States 33%
• Decay Length 33%
• Midgap 33%
• Research Application 33%
• Two-dimensional Metals 33%
• Energy Band Diagram 33%
• Optoelectronic Properties 33%
• Metals Transition 33%
• Ohmic Contact 33%
• AuPd 33%
• Ultimate Limit 33%
• Monolayer Semiconductors 33%

Material Science

• Monolayers 100%
• Transition Metal Dichalcogenide 100%
• Density 33%
• Electronic Property 33%