@inproceedings{a389162a8bfa4b63b0353472b5767e4a,
title = "A W-band SiGe power amplifier with Psat of 23 dBm and PAE of 16.8% at 95GHz",
abstract = "This paper presents a double-stacked four-way combined W-band power amplifier (PA) in 0.13μm SiGe BiCMOS process with 3dB small-signal bandwidth between 86.6-103.3GHz. This chip achieves a saturated power (Psat) of 23 dBm at a peak PAE of 16.8% at 95 GHz with Psat of more than 21 dBm across 85105 GHz. To the best of the authors' knowledge, this is the highest efficiency reported for silicon-based PAs at these frequencies with output power greater than 23 dBm. This paper also demonstrates the modulation measurements of constellation schemes QPSK, 16-QAM and 64-QAM in the W-Band with data rates up to 12Gbps.",
keywords = "Matching Networks, Mm-Wave, Modulation, Power Amplifier, SiGe",
author = "Chappidi, {Chandrakanth R.} and Kaushik Sengupta",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 IEEE MTT-S International Microwave Symposium, IMS 2017 ; Conference date: 04-06-2017 Through 09-06-2017",
year = "2017",
month = oct,
day = "4",
doi = "10.1109/MWSYM.2017.8058968",
language = "English (US)",
series = "IEEE MTT-S International Microwave Symposium Digest",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1699--1702",
booktitle = "2017 IEEE MTT-S International Microwave Symposium, IMS 2017",
address = "United States",
}