A transient site balance model for atomic layer etching

Joseph R. Vella, Qinzhen Hao, Mahmoud A.I. Elgarhy, Vincent M. Donnelly, David B. Graves

Research output: Contribution to journalArticlepeer-review

Abstract

We present a transient site balance model of plasma-assisted atomic layer etching of silicon (Si) with alternating exposure to chlorine gas (Cl2) and argon ions (Ar+). Molecular dynamics (MD) simulation results are used to provide parameters for the model. The model couples the dynamics of a top monolayer surface region (‘top layer’) and a perfectly mixed subsurface region (‘mixed layer’). The differential equations describing the rates of change of the Cl coverage in the two layers are transient mass balances. Model predictions include Cl coverages and rates of etching of various species from the surface as a function of Cl2 or Ar+ fluence. The simplified phenomenological model reproduces the MD simulation results well over a range of conditions. Comparing model predictions directly to experimental optical emission spectroscopy data, as reported in a previous paper (Vella et al 2023 J. Vac. Sci. Technol. A 41, 062602), provides further evidence of the accuracy of the model.

Original languageEnglish (US)
Article number075009
JournalPlasma Sources Science and Technology
Volume33
Issue number7
DOIs
StatePublished - Jul 2024

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Keywords

  • ALE
  • molecular dynamics
  • site balance model
  • transient

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