A Three-Dimensional Folded Dynamic RAM in Beam-Recrystallized Polysilicon

J. C. Sturm; M. D. Giles; J. F. Gibbons

doi:10.1109/EDL.1984.25866

A Three-Dimensional Folded Dynamic RAM in Beam-Recrystallized Polysilicon

J. C. Sturm, M. D. Giles, J. F. Gibbons

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8 Scopus citations

Abstract

A three-dimensional folded one-transistor dynamic RAM circuit consisting of an access transistor in a beam-recrystallized polysilicon layer above a storage capacitor has been fabricated. Large cell capacitance and low transistor leakage are obtained by use of multiple polysilicon layers and by folding the storage capacitor beneath the access transistor. The resulting storage times are longer than 1 min, several orders of magnitude greater than storage times in a previously published nonfolded dynamic RAM in recrystallized polysilicon [1].

Original language	English (US)
Pages (from-to)	151-153
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	5
Issue number	5
DOIs	https://doi.org/10.1109/EDL.1984.25866
State	Published - May 1984
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/EDL.1984.25866

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abstract = "A three-dimensional folded one-transistor dynamic RAM circuit consisting of an access transistor in a beam-recrystallized polysilicon layer above a storage capacitor has been fabricated. Large cell capacitance and low transistor leakage are obtained by use of multiple polysilicon layers and by folding the storage capacitor beneath the access transistor. The resulting storage times are longer than 1 min, several orders of magnitude greater than storage times in a previously published nonfolded dynamic RAM in recrystallized polysilicon [1].",

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year = "1984",

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AU - Giles, M. D.

AU - Gibbons, J. F.

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N2 - A three-dimensional folded one-transistor dynamic RAM circuit consisting of an access transistor in a beam-recrystallized polysilicon layer above a storage capacitor has been fabricated. Large cell capacitance and low transistor leakage are obtained by use of multiple polysilicon layers and by folding the storage capacitor beneath the access transistor. The resulting storage times are longer than 1 min, several orders of magnitude greater than storage times in a previously published nonfolded dynamic RAM in recrystallized polysilicon [1].

AB - A three-dimensional folded one-transistor dynamic RAM circuit consisting of an access transistor in a beam-recrystallized polysilicon layer above a storage capacitor has been fabricated. Large cell capacitance and low transistor leakage are obtained by use of multiple polysilicon layers and by folding the storage capacitor beneath the access transistor. The resulting storage times are longer than 1 min, several orders of magnitude greater than storage times in a previously published nonfolded dynamic RAM in recrystallized polysilicon [1].

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A Three-Dimensional Folded Dynamic RAM in Beam-Recrystallized Polysilicon

Abstract

All Science Journal Classification (ASJC) codes

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