A Three-Dimensional Folded Dynamic RAM in Beam-Recrystallized Polysilicon

James Christopher Sturm, M. D. Giles, J. F. Gibbons

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

A three-dimensional folded one-transistor dynamic RAM circuit consisting of an access transistor in a beam-recrystallized polysilicon layer above a storage capacitor has been fabricated. Large cell capacitance and low transistor leakage are obtained by use of multiple polysilicon layers and by folding the storage capacitor beneath the access transistor. The resulting storage times are longer than 1 min, several orders of magnitude greater than storage times in a previously published nonfolded dynamic RAM in recrystallized polysilicon [1].

Original languageEnglish (US)
Pages (from-to)151-153
Number of pages3
JournalIEEE Electron Device Letters
Volume5
Issue number5
DOIs
StatePublished - Jan 1 1984
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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