A terahertz imaging receiver in 0.13μm SiGe BiCMOS technology

Kaushik Sengupta, Dongjin Seo, Ali Hajimiri

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Scopus citations

Abstract

This paper presents an integrated THz imaging receiver in bulk 0.13μm SiGe technology. The receiver, based on direct power detection, achieves a peak responsivity of 2.6MV/W and 700kV/W and a NEP of 8.7pW/√Hz and 32.4 pW/√Hz at 0.25 THz and 0.3 THz, respectively. No external silicon lens or postprocessing, such as substrate thinning, was employed for improving antenna gain, efficiency and reducing power loss in substrate modes. To the best of the authors' knowledge, this is the lowest reported NEP in silicon at THz frequencies, without the use of expensive post-processing or external silicon lens.

Original languageEnglish (US)
Title of host publicationIRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves
DOIs
StatePublished - Dec 1 2011
Externally publishedYes
Event36th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2011 - Houston, TX, United States
Duration: Oct 2 2011Oct 7 2011

Publication series

NameIRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves

Other

Other36th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2011
CountryUnited States
CityHouston, TX
Period10/2/1110/7/11

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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