A terahertz imaging receiver in 0.13μm SiGe BiCMOS technology

Kaushik Sengupta; Dongjin Seo; Ali Hajimiri

doi:10.1109/irmmw-THz.2011.6105192

A terahertz imaging receiver in 0.13μm SiGe BiCMOS technology

Kaushik Sengupta, Dongjin Seo, Ali Hajimiri

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

16 Scopus citations

Abstract

This paper presents an integrated THz imaging receiver in bulk 0.13μm SiGe technology. The receiver, based on direct power detection, achieves a peak responsivity of 2.6MV/W and 700kV/W and a NEP of 8.7pW/√Hz and 32.4 pW/√Hz at 0.25 THz and 0.3 THz, respectively. No external silicon lens or postprocessing, such as substrate thinning, was employed for improving antenna gain, efficiency and reducing power loss in substrate modes. To the best of the authors' knowledge, this is the lowest reported NEP in silicon at THz frequencies, without the use of expensive post-processing or external silicon lens.

Original language	English (US)
Title of host publication	IRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves
Publisher	IEEE Computer Society
ISBN (Print)	9781457705090
DOIs	https://doi.org/10.1109/irmmw-THz.2011.6105192
State	Published - Oct 1 2011
Externally published	Yes
Event	36th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2011 - Houston, TX, United States Duration: Oct 2 2011 → Oct 7 2011

Publication series

Name	IRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves

Other

Other	36th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2011
Country/Territory	United States
City	Houston, TX
Period	10/2/11 → 10/7/11

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/irmmw-THz.2011.6105192

Cite this

Sengupta, K., Seo, D., & Hajimiri, A. (2011). A terahertz imaging receiver in 0.13μm SiGe BiCMOS technology. In IRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves Article 6105192 (IRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves). IEEE Computer Society. https://doi.org/10.1109/irmmw-THz.2011.6105192

@inproceedings{a7fe31c2ae424088b234d738bf860595,

title = "A terahertz imaging receiver in 0.13μm SiGe BiCMOS technology",

abstract = "This paper presents an integrated THz imaging receiver in bulk 0.13μm SiGe technology. The receiver, based on direct power detection, achieves a peak responsivity of 2.6MV/W and 700kV/W and a NEP of 8.7pW/√Hz and 32.4 pW/√Hz at 0.25 THz and 0.3 THz, respectively. No external silicon lens or postprocessing, such as substrate thinning, was employed for improving antenna gain, efficiency and reducing power loss in substrate modes. To the best of the authors' knowledge, this is the lowest reported NEP in silicon at THz frequencies, without the use of expensive post-processing or external silicon lens.",

author = "Kaushik Sengupta and Dongjin Seo and Ali Hajimiri",

year = "2011",

month = oct,

day = "1",

doi = "10.1109/irmmw-THz.2011.6105192",

language = "English (US)",

isbn = "9781457705090",

series = "IRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves",

publisher = "IEEE Computer Society",

booktitle = "IRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves",

address = "United States",

note = "36th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2011 ; Conference date: 02-10-2011 Through 07-10-2011",

}

Sengupta, K, Seo, D & Hajimiri, A 2011, A terahertz imaging receiver in 0.13μm SiGe BiCMOS technology. in IRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves., 6105192, IRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves, IEEE Computer Society, 36th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2011, Houston, TX, United States, 10/2/11. https://doi.org/10.1109/irmmw-THz.2011.6105192

A terahertz imaging receiver in 0.13μm SiGe BiCMOS technology. / Sengupta, Kaushik; Seo, Dongjin; Hajimiri, Ali.
IRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves. IEEE Computer Society, 2011. 6105192 (IRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - A terahertz imaging receiver in 0.13μm SiGe BiCMOS technology

AU - Sengupta, Kaushik

AU - Seo, Dongjin

AU - Hajimiri, Ali

PY - 2011/10/1

Y1 - 2011/10/1

N2 - This paper presents an integrated THz imaging receiver in bulk 0.13μm SiGe technology. The receiver, based on direct power detection, achieves a peak responsivity of 2.6MV/W and 700kV/W and a NEP of 8.7pW/√Hz and 32.4 pW/√Hz at 0.25 THz and 0.3 THz, respectively. No external silicon lens or postprocessing, such as substrate thinning, was employed for improving antenna gain, efficiency and reducing power loss in substrate modes. To the best of the authors' knowledge, this is the lowest reported NEP in silicon at THz frequencies, without the use of expensive post-processing or external silicon lens.

AB - This paper presents an integrated THz imaging receiver in bulk 0.13μm SiGe technology. The receiver, based on direct power detection, achieves a peak responsivity of 2.6MV/W and 700kV/W and a NEP of 8.7pW/√Hz and 32.4 pW/√Hz at 0.25 THz and 0.3 THz, respectively. No external silicon lens or postprocessing, such as substrate thinning, was employed for improving antenna gain, efficiency and reducing power loss in substrate modes. To the best of the authors' knowledge, this is the lowest reported NEP in silicon at THz frequencies, without the use of expensive post-processing or external silicon lens.

UR - http://www.scopus.com/inward/record.url?scp=84855882645&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84855882645&partnerID=8YFLogxK

U2 - 10.1109/irmmw-THz.2011.6105192

DO - 10.1109/irmmw-THz.2011.6105192

M3 - Conference contribution

AN - SCOPUS:84855882645

SN - 9781457705090

T3 - IRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves

BT - IRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves

PB - IEEE Computer Society

T2 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2011

Y2 - 2 October 2011 through 7 October 2011

ER -

A terahertz imaging receiver in 0.13μm SiGe BiCMOS technology

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