A simple and robust approach to reducing contact resistance in organic transistors

Zachary A. Lamport, Katrina J. Barth, Hyunsu Lee, Eliot Gann, Sebastian Engmann, Hu Chen, Martin Guthold, Iain McCulloch, John E. Anthony, Lee J. Richter, Dean M. DeLongchamp, Oana D. Jurchescu

Research output: Contribution to journalArticlepeer-review

92 Scopus citations


Efficient injection of charge carriers from the contacts into the semiconductor layer is crucial for achieving high-performance organic devices. The potential drop necessary to accomplish this process yields a resistance associated with the contacts, namely the contact resistance. A large contact resistance can limit the operation of devices and even lead to inaccuracies in the extraction of the device parameters. Here, we demonstrate a simple and efficient strategy for reducing the contact resistance in organic thin-film transistors by more than an order of magnitude by creating high work function domains at the surface of the injecting electrodes to promote channels of enhanced injection. We find that the method is effective for both organic small molecule and polymer semiconductors, where we achieved a contact resistance as low as 200 Ωcm and device charge carrier mobilities as high as 20 cm2V−1s−1, independent of the applied gate voltage.

Original languageEnglish (US)
Article number5130
JournalNature communications
Issue number1
StatePublished - Dec 1 2018
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • General Biochemistry, Genetics and Molecular Biology
  • General Physics and Astronomy


Dive into the research topics of 'A simple and robust approach to reducing contact resistance in organic transistors'. Together they form a unique fingerprint.

Cite this