A silicon single-electron transistor memory operating at room temperature

Engineering

• Nanometre 100%
• Room Temperature 100%
• Floating Gate 100%
• Single Electron 100%
• Control Gate 66%
• Nanoscale 33%
• Integrated Circuit 33%
• Metal Oxide Semiconductor 33%
• Polysilicon 33%
• Charging Voltage 33%
• Charging Process 33%

Material Science

• Silicon 100%
• Transistor 100%
• Oxide Semiconductor 50%
• Metal Oxide 50%
• Electronic Circuit 50%

Keyphrases

• Ultra-large-scale 33%