A silicon single-electron transistor memory operating at room temperature

Lingjie Guo, Effendi Leobandung, Stephen Y. Chou

Research output: Contribution to journalArticle

330 Scopus citations

Abstract

A single-electron memory, in which a bit of information is stored by one electron, is demonstrated at room temperature. The memory is a floating gate metal-oxide-semiconductor transistor in silicon with a channel width (~10 nanometers) smaller than the Debye screening length of a single electron and a nanoscale polysilicon dot (~7 nanometers by 7 nanometers) as the floating gate embedded between the channel and the control gate. Storing one electron on the floating gate screens the entire channel from the potential on the control gate and leads to (i) a discrete shift in the threshold voltage, (ii) a staircase relation between the charging voltage and the shift, and (iii) a self-limiting charging process. The structure and fabrication of the memory should be compatible with future ultralarge-scale integrated circuits.

Original languageEnglish (US)
Pages (from-to)649-651
Number of pages3
JournalScience
Volume275
Issue number5300
DOIs
StatePublished - Jan 31 1997
Externally publishedYes

All Science Journal Classification (ASJC) codes

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