A Seeded-Channel Silicon-on-Insulator (SOI) MOS Technology

W. Baerg; H. Y. Lin; B. B. Siu; C. H. Ting; J. C. Tzeng; J. C. Sturm; T. L. Hwa; J. F. Gibbons

doi:10.1109/EDL.1985.26268

Research output: Contribution to journal › Article › peer-review

Abstract

An improved silicon-on-insulator (SOI) MOSFET transistor structure is presented. The structure retains the density and low-capacitance advantages of SOI, but places the transistor channel region in the single-crystal silicon substrate. This “seeded-channel“ configuration avoids floating-body effects and ensures that defects in the SOI will not affect the channel mobility. The technology has been used to successfully fabricate n-channel transistors.

Original language	English (US)
Pages (from-to)	668-670
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	6
Issue number	12
DOIs	https://doi.org/10.1109/EDL.1985.26268
State	Published - Dec 1985
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/EDL.1985.26268

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title = "A Seeded-Channel Silicon-on-Insulator (SOI) MOS Technology",

abstract = "An improved silicon-on-insulator (SOI) MOSFET transistor structure is presented. The structure retains the density and low-capacitance advantages of SOI, but places the transistor channel region in the single-crystal silicon substrate. This “seeded-channel“ configuration avoids floating-body effects and ensures that defects in the SOI will not affect the channel mobility. The technology has been used to successfully fabricate n-channel transistors.",

author = "W. Baerg and Lin, \{H. Y.\} and Siu, \{B. B.\} and Ting, \{C. H.\} and Tzeng, \{J. C.\} and Sturm, \{J. C.\} and Hwa, \{T. L.\} and Gibbons, \{J. F.\}",

year = "1985",

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doi = "10.1109/EDL.1985.26268",

language = "English (US)",

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AU - Baerg, W.

AU - Lin, H. Y.

AU - Siu, B. B.

AU - Ting, C. H.

AU - Tzeng, J. C.

AU - Sturm, J. C.

AU - Hwa, T. L.

AU - Gibbons, J. F.

PY - 1985/12

Y1 - 1985/12

N2 - An improved silicon-on-insulator (SOI) MOSFET transistor structure is presented. The structure retains the density and low-capacitance advantages of SOI, but places the transistor channel region in the single-crystal silicon substrate. This “seeded-channel“ configuration avoids floating-body effects and ensures that defects in the SOI will not affect the channel mobility. The technology has been used to successfully fabricate n-channel transistors.

AB - An improved silicon-on-insulator (SOI) MOSFET transistor structure is presented. The structure retains the density and low-capacitance advantages of SOI, but places the transistor channel region in the single-crystal silicon substrate. This “seeded-channel“ configuration avoids floating-body effects and ensures that defects in the SOI will not affect the channel mobility. The technology has been used to successfully fabricate n-channel transistors.

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JO - IEEE Electron Device Letters

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ER -

A Seeded-Channel Silicon-on-Insulator (SOI) MOS Technology

Abstract

All Science Journal Classification (ASJC) codes

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