An improved silicon-on-insulator (SOI) MOSFET transistor structure is presented. The structure retains the density and low-capacitance advantages of SOI, but places the transistor channel region in the single-crystal silicon substrate. This “seeded-channel“ configuration avoids floating-body effects and ensures that defects in the SOI will not affect the channel mobility. The technology has been used to successfully fabricate n-channel transistors.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering